NPN BUX98 HIGH VOLTAGE FAST SWITCHING The BUX98 is silicon multiepitaxial NPN transistor in Jedec TO-3. They are intended and industrial applications from single and three-phase mains operation. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VCES VEBO IC ICM ICP IB IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Peak Current non Rep. Base Current Base Peak Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 (RBE ≤ 10Ω) VBE = 0 IC = 0 tp = <5ms tp = <20µs tp = <5ms @ TC = 25° Value Unit 400 350 850 7 30 60 80 8 30 250 200 -65 to +200 V V V A A A A A Watts °C °C Value Unit 0.7 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/3 NPN BUX98 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(SUS) Collector-Emitter Sustaining Voltage (1) ICER Collector Cutoff Current ICEO Collector Cutoff Current ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE(SAT) Collector-Emitter saturation Voltage (1) VBE(SAT) Base-Emitter saturation Voltage (1) ton Turn-on time ts Storage time tf File time IC =100 mA VCE = VCES , RBE = 10Ω VCE = VCES , RBE = 10Ω , TCASE = 125°C VCE = VCEO , IB =0A VCE = VCES , VBE = 0 VCE = VCES , VBE = 0 , TCASE = 125°C VEB =5.0 V, IC=0 IC =12 A , IB =3 A IC =16 A , IB =5 A IC =20 A , IB =8 A IC =12 A , IB =3 A IC =20 A , IB =8 A RESISTIVE LOAD IC=8 A , IB=1 A , VCC=150 V IC=12 A , VCC=250 V IB1 = -IB2 =3 A Min Typ Mx Unit 700 - - - - 1 8 2 1 6 2 1.5 2 3 1.6 2 - 0.5 1 - 1.5 3 - 0.2 0.8 (1) Pulse Duration = 300 µs, Duty Cycle ≤ 1.5% COMSET SEMICONDUCTORS 2/3 V mA mA mA mA V µs NPN BUX98 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 typ - Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3