NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° Value Unit 250 300 7.0 300 20 25 4 150 200 -65 to +200 V V V V A A A Watts °C °C Value Unit 1.17 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICEO Collector-Emitter Sustaining Voltage (1) Emitter-Base Breakdown Voltage (1) Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCEO(SUS) VEB0(SUS) Min Typ Mx Unit 250 - - V IC=0A , IE=50 mA 7 - - V VCE=200 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 - - 1.5 1.5 6 1 mA IC=200 mA COMSET SEMICONDUCTORS 1/2 mA mA NPN BUX12 hFE DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) VCE(SAT) VBE(SAT) Symbol IC=10 A , IB=1.25 A 20 10 - 0.22 0.5 60 1 1.5 IC=10 A , IB=1.25 A - 1.23 1.5 IC=5 A , VCE=4.0 V IC=10 A , VCE=4.0 V IC=5 A , IB=0.5 A Ratings Test Condition(s)Sec Min Typ Mx Unit - - A 10 - - A VCE=15 V , IC=1 A , f=10 MHz 8 - - MHz IC=10 A , IB=1.25 A , VCC=150 V - 0.28 1 - 1.45 2 - 0.23 0.5 VCE=30 V , ts = 1s VCE=140 V , ts = 1s fT ton Turn-on time ts Storage time tf File time ES/B Vclamp=250 V , L=500 µH IC=10 A , VCC=150 V IB1 = -IB2 =1.25 A (1) Pulse Duration = 300 µs, Duty Cycle <= 2% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 V 5 0.15 Second breakdown collector current Clamped ES/B Collector current Transition frequency IS/B - inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/2 µs