NPN BUX48 – BUX48A HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR They are silicon multiepitaxial mesa NPN transistor in Jedec TO-3 case. They are intended for use in switching and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB = 0 VCES Collector-Emitter Voltage VBE = 0 VCER Collector-Emitter Voltage RBE= 10Ω VCBO Collector-Base Voltage IE = 0 VEBO IC ICM IB IBM Pt TJ TStg Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Power Dissipation Junction Temperature Storage Temperature IC = 0 tp = 5ms @ TC = 25° Value BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A Unit 400 450 850 1000 850 1000 850 1000 7 15 30 4 20 175 200 -65 to +200 V A A A A W °C °C Value Unit 1 °C/W V V V THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/3 NPN BUX48 – BUX48A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC= 100 mA VEBO Emitter-Base Voltage IC= 0 IE= 50 mA ICER ICES Collector Cutoff Current Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain (*) VCE(SAT) Collector-Emitter saturation Voltage (*) VBE(SAT) Base-Emitter saturation Voltage (*) BUX48 BUX48A BUX48 BUX48A Min Typ Max Unit 400 450 - - V 7 - 30 V - - 0.5 VCE= 400 V IB= 0 RBE= 10Ω @ 25°C @ 125°C - - 4 VCE= 450 V IB= 0 RBE= 10Ω VCE= 850 V VBE= 0 VCE= 1000 V VBE= 0 @ 25°C - - 0.5 - - 4 0.2 2 0.2 2 - - 0.1 mA 8 - - - - - 1.5 - - 5 - - 1.6 Min Typ Max - - 0.9 2 0.4 0.9 2 0.4 BUX48 @ 125°C @ 25°C @ 125°C @ 25°C @ 125°C VEB= 5 V, IC= 0 IC= 10 A, VCE= 5 V IC= 8 A, VCE= 5 V IC= 10 A, IB= 2 A IC= 8 A, IB= 1.6 A IC= 15 A, IB= 34 A IC= 12 A, IB= 2.4 A IC= 10 A, IB= 2 A IC= 12 A, IB= 2.4 A BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 BUX48A mA mA V SWITCHING TIMES Symbol ton ts tf ton ts tf Ratings Turn-on time Storage time File time Turn-on time Storage time File time Test Condition(s) IC=10 A , IB1 = -IB2 =2 A VCC=300 V, VEB= 5 V IC=8 A , IB1 = -IB2 =1.6 A VCC=300 V, VEB= 5 V Unit µs µs (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 08/11/2012 COMSET SEMICONDUCTORS 2/3 NPN BUX48 – BUX48A MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D E G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 3.84 38.50 29.90 Pin 1 : Pin 2 : Case : typ - max 13.10 1.15 1.65 8.92 22 11.1 17.20 27,20 4.21 40.13 30.40 Base Emitter Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 08/11/2012 [email protected] COMSET SEMICONDUCTORS 3/3