PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IB = 0) VCBO Collector-Base Voltage (IE = 0) VCEV Collector-Emitter Voltage (VBE = 1.5V) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current PD Total Power Dissipation @ Tamb = 25° @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range Value 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 Unit -75 -50 -100 -75 -100 -75 -6 -5 V V V V -2 A -1 A 1 Watts 10 -65 to +200 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N5322 2N5323 2N5322 2N5323 Value Unit 175 °C/W 17.5 °C/W 1/3 PNP 2N5322 – 2N5323 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCEO VCEV VEBO hFE (1) Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage VCB = -80 V, IE =0 VCB = -60 V, IE =0 VEB = -5 V, IC =0 VEB = -4 V, IC =0 IC = -10 mA, IB =0 IC = -100 µA VBE = 1.5V IE = -100 µA, IC =0 IC = -500 mA VCE = -4 V DC Current Gain IC = -1 A VCE = -2 V VCE(SAT) (1) Collector-Emitter saturation Voltage IC = -500 mA, IB = -50 mA VBE (1) Base-Emitter Voltage IC = -500 mA, VCE = -4 V fT Transition frequency IC = -50 mA, VCE = -4 V f = 10 MHz ton Turn-on Time IC = -500 mA, VCC = -30 V IB1 = -50 mA toff Turn-off Time IC = 500 mA, VCC = 30 V IB1 = -IB2 = -50 mA 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 Min Typ Mx -0.1 -0.5 -75 -50 -100 -75 -6 -5 30 40 - -0.5 -5 130 250 µA µA V V V - 2N5322 10 - - 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 - - -0.7 -1.2 -1.1 -1.4 50 - - MHz - - 100 ns - - 1000 ns (1) Pulse conditions : tp < 300 µs, δ =1% COMSET SEMICONDUCTORS Unit 2/3 V V PNP 2N5322 – 2N5323 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L Pin 1 : Pin 2 : Case : 12.7 5.08 45° typ max - 0.49 6.6 8.5 9.4 1.2 0.9 - Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3