DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 DS25BR120 3.125 Gbps LVDS Buffer with Transmit Pre-Emphasis Check for Samples: DS25BR120 FEATURES DESCRIPTION • The DS25BR120 is a single channel 3.125 LVDS buffer optimized for high-speed transmission over lossy FR-4 printed circuit backplanes and balanced metallic cables. differential signal paths ensure exceptional integrity and noise immunity. 1 2 • • • • DC - 3.125 Gbps Low Jitter, High Noise Immunity, Low Power Operation Four Levels of Transmit Pre-Emphasis Drive Lossy Backplanes and Cables On-Chip 100Ω Input and Output Termination Minimizes Insertion and Return Losses, Reduces Component Count, and Minimizes Board Space 7 kV ESD on LVDS I/O pins Protects Adjoining Components Small 3 mm x 3 mm 8-WSON Space Saving Package The DS25BR120 features four levels of pre-emphasis (PE) for use as an optimized driver device. Other LVDS devices with similar IO characteristics include the following products. The DS25BR110 features four levels of equalization for use as an optimized receiver device, while the DS25BR100 features both preemphasis and equalization for use as an optimized repeater device. The DS25BR150 is a buffer/repeater with the lowest power consumption and does not feature transmit pre-emphasis nor receive equalization. APPLICATIONS • • • Gbps signal board Fully signal Clock and Data Buffering Metallic Cable Driving FR-4 Driving Wide input common mode range allows the receiver to accept signals with LVDS, CML and LVPECL levels; the output levels are LVDS. A very small package footprint requires minimal space on the board while the flow-through pinout allows easy board layout. The differential inputs and outputs are internally terminated with a 100Ω resistor to lower device input and output return losses, reduce component count and further minimize board space. Typical Application PE 2 CML ASIC / FPGA LVDS BR120 LVPECL LVDS ASIC / FPGA 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2013, Texas Instruments Incorporated DS25BR120 SNLS256E – MARCH 2007 – REVISED APRIL 2013 www.ti.com Block Diagram PE0 PE1 IN+ OUT+ IN- OUT- Pin Diagram PE1 1 IN+ 2 IN- 3 PE0 4 8 VCC DAP 7 OUT+ GND 6 OUT- 5 NC WSON Package PIN DESCRIPTIONS Pin Name Pin Name Pin Type Pin Description PE1 1 Input Pre-emphasis select pin. IN+ 2 Input Non-inverting LVDS input pin. IN- 3 Input Inverting LVDS input pin. PE0 4 Input Pre-emphasis select pin. NC 5 NA "NO CONNECT" pin. OUT- 6 Output Inverting LVDS output pin. OUT+ 7 Output Non-inverting LVDS Output pin. VCC 8 Power Power supply pin. GND DAP Power Ground pad (DAP - die attach pad) Pre-Emphasis Truth Table PE1 PE0 0 0 Pre-emphasis Level Off 0 1 Low (Approx. 3 dB at 1.56 GHz) 1 0 Medium (Approx. 6 dB at 1.56 GHz) 1 1 High (Approx. 9 dB at 1.56 GHz) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 Absolute Maximum Ratings (1) (2) −0.3V to +4V Supply Voltage (VCC) −0.3V to (VCC + 0.3V) LVCMOS Input Voltage (PE0, PE1) LVDS Input Voltage (IN+, IN−) −0.3V to +4V Differential Input Voltage |VID| 1.0V −0.3V to (VCC + 0.3V) LVDS Output Voltage (OUT+, OUT−) LVDS Differential Output Voltage ((OUT+) - (OUT−)) 0V to 1.0V LVDS Output Short Circuit Current Duration 5 ms Junction Temperature +150°C −65°C to +150°C Storage Temperature Range Lead Temperature Range Soldering (4 sec.) +260°C Maximum Package Power Dissipation at 25°C NGQ Package 2.08W Derate NGQ Package 16.7 mW/°C above +25°C Package Thermal Resistance θJA +60.0°C/W θJC +12.3°C/W ESD Susceptibility HBM (3) ≥7 kV MM (4) ≥250V CDM (5) (1) (2) (3) (4) (5) ≥1250V “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. Human Body Model, applicable std. JESD22-A114C Machine Model, applicable std. JESD22-A115-A Field Induced Charge Device Model, applicable std. JESD22-C101-C Recommended Operating Conditions Supply Voltage (VCC) Receiver Differential Input Voltage (VID) Operating Free Air Temperature (TA) Min Typ Max Units 3.0 3.3 3.6 V 0 −40 +25 1.0 V +85 °C Electrical Characteristics Over recommended operating supply and temperature ranges unless otherwise specified. (1) (2) (3) Symbol Parameter Conditions Min Typ Max Units V LVCMOS INPUT DC SPECIFICATIONS (PE0, PE1) VIH High Level Input Voltage 2.0 VCC VIL Low Level Input Voltage GND 0.8 V IIH High Level Input Current VIN = 3.6V VCC = 3.6V 0 ±10 μA IIL Low Level Input Current VIN = GND VCC = 3.6V 0 ±10 μA (1) (2) (3) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and ΔVOD. Typical values represent most likely parametric norms for VCC = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not ensured. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 3 DS25BR120 SNLS256E – MARCH 2007 – REVISED APRIL 2013 www.ti.com Electrical Characteristics (continued) Over recommended operating supply and temperature ranges unless otherwise specified.(1)(2)(3) Symbol VCL Parameter Conditions Min ICL = −18 mA, VCC = 0V Input Clamp Voltage Typ Max Units -0.9 −1.5 V 350 450 mV 35 mV 1.375 V 35 mV LVDS OUTPUT DC SPECIFICATIONS (OUT+, OUT-) VOD Differential Output Voltage ΔVOD Change in Magnitude of VOD for Complimentary Output States 250 VOS Offset Voltage ΔVOS Change in Magnitude of VOS for Complimentary Output States RL = 100Ω IOS Output Short Circuit Current (4) OUT to GND PE0 = PE1 = 0 -35 -55 mA OUT to VCC PE0 = PE1 = 0 7 55 mA RL = 100Ω -35 1.05 1.2 -35 COUT Output Capacitance Any LVDS Output Pin to GND 1.2 pF ROUT Output Termination Resistor Between OUT+ and OUT- 100 Ω LVDS INPUT DC SPECIFICATIONS (IN+, IN-) VID Input Differential Voltage VTH Differential Input High Threshold 0 VTL Differential Input Low Threshold VCMR Common Mode Voltage Range VID = 100 mV IIN Input Current VIN = 3.6V or 0V VCC = 3.6V or 0V CIN Input Capacitance Any LVDS Input Pin to GND 1.7 pF RIN Input Termination Resistor Between IN+ and IN- 100 Ω PE0 = 0, PE1 = 0 35 43 mA Typ Max Units 350 465 ps 350 465 ps VCM = +0.05V or VCC-0.05V 0 −100 1 V +100 mV 0 0.05 ±1 mV VCC 0.05 V ±10 μA SUPPLY CURRENT ICC (4) Supply Current Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. AC Electrical Characteristics (1) Over recommended operating supply and temperature ranges unless otherwise specified. (2) (3) Symbol Parameter Conditions Min LVDS OUTPUT AC SPECIFICATIONS (OUT+, OUT-) tPHLD Differential Propagation Delay High to Low tPLHD Differential Propagation Delay Low to High RL = 100Ω (4) tSKD1 Pulse Skew |tPLHD − tPHLD| 45 100 ps tSKD2 Part to Part Skew (5) 45 150 ps tLHT Rise Time 80 150 ps tHLT Fall Time 80 150 ps (1) (2) (3) (4) (5) 4 RL = 100Ω Specification is ensured by characterization and is not tested in production. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. Typical values represent most likely parametric norms for VCC = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not ensured. tSKD1, |tPLHD − tPHLD|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of the same channel. tSKD2, Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification applies to devices at the same VCC and within 5°C of each other within the operating temperature range. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 AC Electrical Characteristics(1) (continued) Over recommended operating supply and temperature ranges unless otherwise specified.(2)(3) Symbol Parameter Conditions Min Typ Max Units JITTER PERFORMANCE WITH PE = OFF tRJ1A tRJ2A VID = 350 mV VCM = 1.2V Clock (RZ) PE0 = 0, PE1 = 0 2.5 Gbps 0.5 1 ps 3.125 Gbps 0.5 1 ps VID = 350 mV VCM = 1.2V K28.5 (NRZ) PE0 = 0, PE1 = 0 2.5 Gbps 9 31 ps Deterministic Jitter (Peak to Peak) No Test Channels (7) 3.125 Gbps 16 40 ps VID = 350 mV VCM = 1.2V PRBS-23 (NRZ) PE0 = 0, PE1 = 0 2.5 Gbps 0.05 0.13 UIP-P Total Jitter (Peak to Peak) No Test Channels (8) 3.125 Gbps 0.09 0.16 UIP-P Random Jitter (RMS Value) No Test Channels (6) tDJ1A tDJ2A tTJ1A tTJ2A JITTER PERFORMANCE WITH PE = LOW (Figure 5 and Figure 6) tRJ1B tRJ2B VID = 350 mV VCM = 1.2V Clock (RZ) PE0 = 1, PE1 = 0 2.5 Gbps 0.5 1.3 ps Random Jitter (RMS Value) Test Channel A (6) 3.125 Gbps 0.5 1.3 ps VID = 350 mV VCM = 1.2V K28.5 (NRZ) PE0 = 1, PE1 = 0 2.5 Gbps 17 31 ps Deterministic Jitter (Peak to Peak) Test Channel A (7) 3.125 Gbps 18 40 ps VID = 350 mV VCM = 1.2V PRBS-23 (NRZ) PE0 = 1, PE1 = 0 2.5 Gbps 0.09 0.14 UIP-P Total Jitter (Peak to Peak) Test Channel A (8) 3.125 Gbps 0.12 0.19 UIP-P tDJ1B tDJ2B tTJ1B tTJ2B JITTER PERFORMANCE WITH PE = MEDIUM (Figure 5 and Figure 6) tRJ1C tRJ2C VID = 350 mV VCM = 1.2V Clock (RZ) PE0 = 0, PE1 = 1 2.5 Gbps 0.5 1.2 ps Random Jitter (RMS Value) Test Channel B (6) 3.125 Gbps 0.5 1.2 ps VID = 350 mV VCM = 1.2V K28.5 (NRZ) PE0 = 0, PE1 = 1 2.5 Gbps 21 44 ps Deterministic Jitter (Peak to Peak) Test Channel B (7) 3.125 Gbps 27 48 ps VID = 350 mV VCM = 1.2V PRBS-23 (NRZ) PE0 = 0, PE1 = 1 2.5 Gbps 0.09 0.16 UIP-P Total Jitter (Peak to Peak) Test Channel B (8) 3.125 Gbps 0.13 0.23 UIP-P tDJ1C tDJ2C tTJ1C tTJ2C JITTER PERFORMANCE WITH PE = HIGH (Figure 5 and Figure 6) tRJ1D tRJ2D VID = 350 mV VCM = 1.2V Clock (RZ) PE0 = 1, PE1 = 1 2.5 Gbps 0.5 1.2 ps Random Jitter (RMS Value) Test Channel C (6) 3.125 Gbps 0.5 1.2 ps VID = 350 mV VCM = 1.2V K28.5 (NRZ) PE0 = 1, PE1 = 1 2.5 Gbps 30 65 ps Deterministic Jitter (Peak to Peak) Test Channel C (7) 3.125 Gbps 30 58 ps VID = 350 mV VCM = 1.2V PRBS-23 (NRZ) PE0 = 1, PE1 = 1 2.5 Gbps 0.09 0.20 UIP-P Total Jitter (Peak to Peak) Test Channel C (8) 3.125 Gbps 0.13 0.22 UIP-P tDJ1D tDJ2D tTJ1D tTJ2D (6) (7) (8) Measured on a clock edge with a histogram and an accumulation of 1500 histogram hits. Input stimulus jitter is subtracted geometrically. Tested with a combination of the 1100000101 (K28.5+ character) and 0011111010 (K28.5- character) patterns. Input stimulus jitter is subtracted algebraically. Measured on an eye diagram with a histogram and an accumulation of 3500 histogram hits. Input stimulus jitter is subtracted. Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 5 DS25BR120 SNLS256E – MARCH 2007 – REVISED APRIL 2013 www.ti.com APPLICATION INFORMATION DC TEST CIRCUITS VOH OUT+ IN+ Power Supply R D RL Power Supply IN- OUTVOL Figure 1. Differential Driver DC Test Circuit AC TEST CIRCUITS AND TIMING DIAGRAMS OUT+ IN+ R Signal Generator D IN- RL OUT- Figure 2. Differential Driver AC Test Circuit Figure 3. Propagation Delay Timing Diagram Figure 4. LVDS Output Transition Times PRE-EMPHASIS TEST CIRCUITS CHARACTERIZATION BOARD 50: MS L=4" TEST CHANNEL DS25BR120 50: MS L=4" PATTERN GENERATOR OSCILLOSCOPE L=4" L=4" 50: MS 50: MS Figure 5. Pre-emphasis Performance Test Circuit 6 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 50: MS 50: MS L = A, B or C L=1" L=1" L=1" 50: MS L=1" 100: Diff. Stripline 50: MS Figure 6. Test Channel Description Test Channel Loss Characteristics The test channel was fabricated with Polyclad PCL-FR-370-Laminate/PCL-FRP-370 Prepreg materials (Dielectric constant of 3.7 and Loss Tangent of 0.02). The edge coupled differential striplines have the following geometries: Trace Width (W) = 5 mils, Gap (S) = 5 mils, Height (B) = 16 mils. Test Channel Length (inches) Insertion Loss (dB) 500 MHz 750 MHz 1000 MHz 1250 MHz 1500 MHz 1560 MHz A 10 -1.2 -1.7 -2.0 -2.4 -2.7 -2.8 B 20 -2.6 -3.5 -4.1 -4.8 -5.5 -5.6 C 30 -4.3 -5.7 -7.0 -8.2 -9.4 -9.7 D 15 -1.6 -2.2 -2.7 -3.2 -3.7 -3.8 E 30 -3.4 -4.5 -5.6 -6.6 -7.7 -7.9 F 60 -7.8 -10.3 -12.4 -14.5 -16.6 -17.0 Device Operation INPUT INTERFACING The DS25BR120 accepts differential signals and allows simple AC or DC coupling. With a wide common mode range, the DS25BR120 can be DC-coupled with all common differential drivers (i.e. LVPECL, LVDS, CML). The following three figures illustrate typical DC-coupled interface to common differential drivers. Note that the DS25BR120 inputs are internally terminated with a 100Ω resistor. 100: Differential T-Line OUT+ IN+ LVDS DS25BR120 OUT- IN- Figure 7. Typical LVDS Driver DC-Coupled Interface to DS25BR120 Input Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 7 DS25BR120 SNLS256E – MARCH 2007 – REVISED APRIL 2013 www.ti.com CML3.3V or CML2.5V VCC 50: 100: Differential T-Line 50: OUT+ IN+ DS25BR120 IN- OUT- Figure 8. Typical CML Driver DC-Coupled Interface to DS25BR120 Input LVPECL Driver OUT+ 100: Differential T-Line LVDS Receiver IN+ 100: OUT150-250: IN150-250: Figure 9. Typical LVPECL Driver DC-Coupled Interface to DS25BR120 Input OUTPUT INTERFACING The DS25BR120 outputs signals compliant to the LVDS standard. It can be DC-coupled to most common differential receivers. The following figure illustrates typical DC-coupled interface to common differential receivers and assumes that the receivers have high impedance inputs. While most differential receivers have a common mode input range that can accommodate LVDS compliant signals, it is recommended to check the respective receiver's datasheet prior to implementing the suggested interface implementation. 100: Differential T-Line OUT+ DS25BR120 IN+ CML or LVPECL or LVDS 100: IN- OUT- Figure 10. Typical DS25BR120 Output DC-Coupled Interface to an LVDS, CML or LVPECL Receiver 8 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS 4.50 4.50 VCC = 3.3V 3.75 MAXIMUM DATA RATE (Gbps) MAXIMUM DATA RATE (Gbps) w/ PE and/or EQ w/ PE 3.00 2.25 w/o PE 1.50 VCC = 3.3V TA = 25°C NRZ PRBS-7 TJ = 0.25 UI 0.75 3.00 2.25 1.50 0 3 6 9 12 w/o PE and EQ 0.75 0 0 15 0 6 CAT5e LENGTH (m) MAXIMUM DATA RATE (Gbps) SUPPLY CURRENT (mA) PE = Low 35 PE = Off 30 VCC = 3.3V 3.75 3.00 2.25 w/o PE 1.50 VCC = 3.3V TA = 25°C NRZ PRBS-7 TJ = 0.25 UI 0.75 TA = 25°C 0 0 0.4 0.8 1.2 30 w/ PE 40 20 24 4.50 PE = Medium 25 18 Figure 12. Maximum Data Rate as a Function of CAT5e (Belden 1700A) Length DS25BR120 Used as a Driver DS25BR110 Used as a Receiver PE = High 45 12 CAT5e LENGTH (m) Figure 11. Maximum Data Rate as a Function of CAT5e (Belden 1700A) Length 50 TA = 25°C NRZ PRBS-7 TJ = 0.25 UI 3.75 1.6 2.0 0 3 6 9 12 15 CAT7 LENGTH (m) FREQUENCY (GHz) Figure 13. Power Supply Current as a Function of Frequency Figure 14. Maximum Data Rate as a Function of CAT7 (Siemon Tera) Length 4.50 Maximum Data Rate (Gbps) w/ PE and/or EQ 3.75 3.00 2.25 w/o PE and EQ 1.50 VCC = 3.3V 0.75 0 TA =25°C NRZ PRBS-7 TJ = 0.5 UI 0 6 12 18 24 30 CAT5e LENGTH (m) Figure 15. Maximum Data Rate as a Function of CAT5e (Belden 1700A) Length DS25BR120 Used as a Driver DS25BR110 Used as a Receiver Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 9 DS25BR120 SNLS256E – MARCH 2007 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10 Figure 16. A 2.5 Gbps NRZ PRBS-7 After 40" Differential FR-4 Stripline V:125 mV / DIV, H:75 ps / DIV Figure 17. A 3.125 Gbps NRZ PRBS-7 After 40" Differential FR-4 Stripline V:125 mV / DIV, H:50 ps / DIV Figure 18. An Equalized (with PE) 2.5 Gbps NRZ PRBS-7 After 40" Differential FR-4 Stripline V:125 mV / DIV, H:75 ps / DIV Figure 19. An Equalized (with PE) 3.125 Gbps NRZ PRBS-7 After 40" Differential FR-4 Stripline V:125 mV / DIV, H:50 ps / DIV Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 DS25BR120 www.ti.com SNLS256E – MARCH 2007 – REVISED APRIL 2013 REVISION HISTORY Changes from Revision D (April 2013) to Revision E • Page Changed layout of National Data Sheet to TI format .......................................................................................................... 10 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: DS25BR120 11 PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) DS25BR120TSD/NOPB ACTIVE WSON NGQ 8 1000 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2R120 DS25BR120TSDX/NOPB ACTIVE WSON NGQ 8 4500 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2R120 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DS25BR120TSD/NOPB WSON NGQ 8 1000 178.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 DS25BR120TSDX/NOPB WSON NGQ 8 4500 330.0 12.4 3.3 3.3 1.0 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS25BR120TSD/NOPB WSON NGQ 8 1000 213.0 191.0 55.0 DS25BR120TSDX/NOPB WSON NGQ 8 4500 367.0 367.0 35.0 Pack Materials-Page 2 MECHANICAL DATA NGQ0008A SDA08A (Rev A) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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