Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816I3 BVCEO IC RCESAT 100V 4A 50mΩ Features • Low collector-to-emitter saturation voltage • High-speed switching • Large current capability • Good linearity of hFE • High fT • RoHS compliant package Applications • Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol Outline BTD1816I3 B：Base C：Collector E：Emitter BTD1816I3 TO-251 B B CC E CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25°C Power Dissipation @ TC=25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 120 100 6 4 8 (Note 1) 1.2 1 20 125 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≤380μs, Duty≤2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE 1 *hFE 2 fT Cob ton tstg tf Min. 120 100 6 180 120 - Typ. 50 90 0.9 180 40 100 900 50 Max. 1 1 120 250 1.2 560 - Unit V V V μA μA mV mV V MHz pF ns ns ns Test Conditions IC=10μA, IE=0 IC=1mA, IB=0 IC=10μA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=200mA IC=2A, IB=200mA VCE=5V, IC=500mA VCE=5V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz VCC=50V, IC=10IB1=-10IB2=2A, RL=25Ω *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range R 180~390 S 270~560 Ordering Information Device BTD1816I3 BTD1816I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box D1816 CYStek Product Specification Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V 1000 IC=20IB 1 100 10 100 1000 1 10000 10 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current On Vottage vs Collector Current 10000 1000 VBE(SAT) @ IC=10IB On Voltage---(mV) Saturation Voltage---(mV) IC=100IB 10 10 1000 100 VBE(ON)@VCE=5V 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 Grounded Emitter Output Characteristics 10 100 1000 Collector Current---IC(mA) 10000 Grounded Emitter Output Characteristics 3.5 8 IB=8mA IB=80mA IB=90mA IB=40mA IB=100mA 7 2.5 Collector Current---IC(A) 3 Collector Current---IC(A) IC=50IB IB=5mA 2 1.5 1 IB=1mA 0.5 IB=60mA 6 5 IB=30mA IB=20mA 4 IB=10mA 3 IB=7mA IB=5mA 2 1 IB=0mA 0 0 BTD1816I3 2 4 6 8 Collector-to-Emitter Voltage---VCE(V) IB=2mA IB=0mA 0 10 IB=70mA IB=50mA 0 1 2 3 4 Collector-to-Emitter Voltage---VCE(V) 5 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 4/6 Characteristic Curves(Cont.) Power Derating Curve Power Derating Curve 25 1 Power Dissipation---PD(W) Power Dissipation---PD(W) 1.2 0.8 0.6 0.4 0.2 0 20 15 10 5 0 0 50 100 150 Ambient Temperature---TA(℃) BTD1816I3 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1816I3 CYStek Product Specification Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 6/6 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D D1816 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter J 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1816I3 CYStek Product Specification