DAYA 2SA1020

TO-92L Plastic-Encapsulate Transistors
2SA1020
TO-92L
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Power amplifier applications
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current –Continuous
-2
A
PC
Collector Power Dissipation
900
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC =-100µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-1
µA
hFE(1)
VCE=-2V,IC=-0.5A
70
hFE(2)
VCE=-2V,IC=-1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=-1A,IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-1A,IB=-50mA
-1.2
V
240
DC current gain
fT
Transition frequency
Collector output capacitance
Cob
Turn-on time
ton
Storage time
ts
Fall time
tf
CLASSIFICATION OF
Rank
Range
VCE=-2V,IC=-500mA
100
MHz
VCB=-10V,IE=0,f=1MHz
40
pF
0.1
μs
1
μs
0.1
μs
VCC=-30V,IB1=-IB2=-0.05A, IC=-1A
hFE(1)
O
Y
70-140
120-240
Typical Characteristics
2SA1020