3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 100 µA Emitter cut-off current IEBO VEB= 9V, IC=0 100 µA hFE1 VCE= 5V, IC= 2 A 8 40 hFE2 VCE=5V, IC=5A 5 30 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Cob Collector output capacitance IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A, IB= 0.4A IC=5A,IB=1A IC=500mA,VCE=10V, f=1MHZ 1 2 3 1.2 1.6 4 VCE=10V,IE=0,f=0.1MHz Fall time tf VCC=125V, IC=5A IB1=-IB2=1A Storage time ts IC=0.5A V V MHZ pF 80 2.7 0.7 µs 7.7 µs CLASSIFICATION OF hFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 3DD13007(NPN) TO-220 Transistor Typical Characteristics