3DD13007(NPN)

3DD13007(NPN)
TO-220 Transistor
TO-220
1.BASE
2.COLLECTOR
3.EMITTER
1
2
3
Features
—
power switching applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
8
A
PC
Collector Power Dissipation
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 1mA,IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA, IC =0
9
V
Collector cut-off current
ICBO
VCB= 700V, IE=0
1
mA
Collector cut-off current
ICEO
VCE= 400V, IB=0
100
µA
Emitter cut-off current
IEBO
VEB= 9V, IC=0
100
µA
hFE1
VCE= 5V, IC= 2 A
8
40
hFE2
VCE=5V, IC=5A
5
30
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Cob
Collector output capacitance
IC=2A,IB=0.4A
IC=5A,IB=1A
IC=8A,IB=2A
IC=2A, IB= 0.4A
IC=5A,IB=1A
IC=500mA,VCE=10V,
f=1MHZ
1
2
3
1.2
1.6
4
VCE=10V,IE=0,f=0.1MHz
Fall time
tf
VCC=125V, IC=5A
IB1=-IB2=1A
Storage time
ts
IC=0.5A
V
V
MHZ
pF
80
2.7
0.7
µs
7.7
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
3DD13007(NPN)
TO-220 Transistor
Typical Characteristics