CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn 3DD13003B TRANSISTOR( NPN ) TO-92 FEATURES 1. EMITTER · power switching applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage 20 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz Fall time tf IC=1A Storage time ts IB1=-IB2=0.2A CLASSIFICATION OF 40 4 MHz 0.7 µs 4 µs hFE Rank Range 20-25 25-30 30-35 35-40 Typical Characteristics 3DD13003B