DAYA 2SD1616A

TO-92 Plastic-Encapsulate Transistors
2SD1616A
TO-92
TRANSISTOR (NPN)
FEATURE
Power dissipation
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3. BSAE
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
750
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to150
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA , IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 2mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
hFE1
VCE=2 V, IC= 100mA
135
hFE2
VCE=2 V,
81
DC current gain
IC= 1A
600
Collector-emitter saturation voltage *
VCE(sat)
IC= 1A, IB=50mA
0.3
V
Base-emitter saturation voltage *
VBE(sat)
IC= 1A, IB=50mA
1.2
V
0.7
V
VBE
Base-emitter voltage *
fT
Transition frequency
Output capacitance
Cob
Turn on time
ton
Storage time
tS
Fall time
tF
VCE= 2V, IC=50mA
0.6
VCE=2 V, IC= 100mA
100
MHz
VCB=10 V,IE= 0, f=1MHz
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
19
0.07
μs
0.95
μs
0.07
μs
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF hFE1
Rank
Range
pF
L
K
U
135-270
200-400
300-600
Typical Characteristics
2SD1616A