TO-92 Plastic-Encapsulate Transistors 2SD1616A TO-92 TRANSISTOR (NPN) FEATURE Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BSAE Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 750 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to150 ℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μA , IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC= 2mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE1 VCE=2 V, IC= 100mA 135 hFE2 VCE=2 V, 81 DC current gain IC= 1A 600 Collector-emitter saturation voltage * VCE(sat) IC= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) IC= 1A, IB=50mA 1.2 V 0.7 V VBE Base-emitter voltage * fT Transition frequency Output capacitance Cob Turn on time ton Storage time tS Fall time tF VCE= 2V, IC=50mA 0.6 VCE=2 V, IC= 100mA 100 MHz VCB=10 V,IE= 0, f=1MHz Vcc=10V, IC=100mA, IB1=-IB2=10mA 19 0.07 μs 0.95 μs 0.07 μs *pulse test: PW≤350µS, δ≤2%. CLASSIFICATION OF hFE1 Rank Range pF L K U 135-270 200-400 300-600 Typical Characteristics 2SD1616A