DAYA MPS2907A

TO-92 Plastic-Encapsulate Transistors
MPS2907A
TO-92
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Complementary NPN Type available (MPS2222A)
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-10
nA
Collector cut-off current
ICEX
VCE=-30V,VEB(off)=-0.5V
-50
nA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-10
nA
hFE(1)
VCE=-10V,IC=-0.1mA
78
hFE(2)
VCE=-10V,IC=-150mA
100
hFE(3)
VCE=-10V,IC=-500mA
52
VCE(sat)
IC=-150mA,IB=-15mA
-0.4
V
VCE(sat)
IC=-500mA,IB=-50mA
-0.67
V
VBE(sat)
IC=-150mA,IB=-15mA
-1
V
VBE(sat)
IC=-500mA,IB=-50mA
-1.2
V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
CLASSIFICATION OF
Rank
Range
VCE=-20V,IC=-50mA,f=100MHz
300
200
MHz
10
nS
25
nS
VCC=-6V,Ic=-150mA,
225
nS
IB1=IB2=-15mA
60
nS
VCC=-30V,Ic=-150mA,IB1=-15mA
hFE(2)
L
H
100-200
200-300
Typical Characteristics
MPS2907A