TO-92 Plastic-Encapsulate Transistors MPS2907A TO-92 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary NPN Type available (MPS2222A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA hFE(1) VCE=-10V,IC=-0.1mA 78 hFE(2) VCE=-10V,IC=-150mA 100 hFE(3) VCE=-10V,IC=-500mA 52 VCE(sat) IC=-150mA,IB=-15mA -0.4 V VCE(sat) IC=-500mA,IB=-50mA -0.67 V VBE(sat) IC=-150mA,IB=-15mA -1 V VBE(sat) IC=-500mA,IB=-50mA -1.2 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf CLASSIFICATION OF Rank Range VCE=-20V,IC=-50mA,f=100MHz 300 200 MHz 10 nS 25 nS VCC=-6V,Ic=-150mA, 225 nS IB1=IB2=-15mA 60 nS VCC=-30V,Ic=-150mA,IB1=-15mA hFE(2) L H 100-200 200-300 Typical Characteristics MPS2907A