LED - Chip ELС-560-10 07.01.2008 rev. 03 Radiation Type Technology Electrodes Green Standard GaP/GaP P (anode) up typ. dimensions (µm) 235 117 typ. thickness 270 (±20) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.1 2.4 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 28 Radiant power2 IF = 20 mA Φe Luminous intensity1 IF = 20 mA IV Luminous intensity2 IF = 20 mA IV Peak wavelength IF = 20 mA λP Dominant wavelength IF = 20 mA λD 563 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 24 nm V 1 550 32 µW 60 µW 1.2 mcd 2.4 mcd 560 570 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment 2 Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-560-10 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545