LED - Chip ELC-740-29-20 25.02.2008 rev. 07 Radiation Type Technology Electrodes Infrared Point Source AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 180 180 typ. thickness +5 -2 150 (± 25) µm 360 Ø50 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm 560 PS-08 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP ≤ 50 µs, tP/T = 1/2 Min Max Unit IF 35 mA IFM 70 mA Typ Max Unit 2.2 2.5 V Symbol Typ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 0.5 0.9 Peak wavelength IF = 20 mA λP 730 740 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 1) V mW 750 nm 30 nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELC-740-29-20 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545