LED - Chip ELC-940-17-70 25.02.2008 rev. 06 Radiation Type Technology Electrodes Infrared Point Source AlGaAs/GaAs P (anode) up typ. dimensions (µm) Ø250 +10 -5 typ. thickness 260 (±20) µm cathode emitting area gold alloy, 0.5 µm bonding area PS-09 anode gold alloy, 1.5 µm Ø100 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP≤50 µs, tP/T = 1/2 Symbol Min Typ Max Unit IF 100 mA IFM 120 mA Typ Max Unit 1.4 1.6 V Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 100 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power* IF = 100 mA Φe 0.5 0,8 Peak wavelength IF = 100 mA λp 930 940 Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 50 nm Switching time IF = 100 mA tr , tf 600 ns V mW 950 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-940-17-70 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545