EPIGAP ELC-980-28-1

LED - Chip
ELC-980-28-1
discontinued
10.04.2007
rev. 03/06
Radiation
Type
Technology
Electrodes
Infrared
MQW
InGaAs/GaAs
N (cathode) up
typ. dimensions (µm)
460
360
300
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm,
solder able
PD-02
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
1.2
1.5
V
Forward voltage
IF = 100 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 100 mA
Φe
0.5
Radiant power2
IF = 100 mA
Φe
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth at 50%
IF = 100 mA
∆λ0.5
80
nm
Switching time
IF = 100 mA
tr, tf
10
ns
1
2
V
970
1.0
mW
2.0
mW
980
1000
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Lot N°
Type
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-980-28-1
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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