LED - Chip ELС-870-21 02.04.2008 rev. 01 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 1000 typ. thickness 160 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions IF = 20 mA Typ Max Unit VF 1.3 1.5 V IF = 350 mA VF 1.5 1.8 V Reverse voltage IR = 100 µA VR 5 Radiant power IF = 20 mA Φe 3.5 5 mW Radiant power IF = 350 mA Φe 70 90 mW Peak wavelength IF = 20 mA λP 860 870 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr , tf 20 ns Forward voltage Forward voltage 1 1 Symbol Min V 880 nm 1 Measured on bare chip glued on a Ø 8 x 1mm Cu header with EPIGAP equipment Labeling Type Lot Φe(typ) [mW] VF(typ) [V] λP(typ) [nm] Quantity ELС-870-21 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545