Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25_C Maximum Power Dissipationa, b TA = 70_C Operating Junction and Storage Temperature Range Unit V 3.5 ID 2.8 IDM 16 IS 1.25 A 1.25 PD W 0.80 TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 5 sec Steady State RthJA Typical Maximum 100 130 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70827 S-31873—Rev. C, 15-Sep-03 www.vishay.com 1 Si2306DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 0.5 VDS = 30 V, VGS = 0 V, TJ = 55_C 10 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) VDS w 4.5 V, VGS = 10 V 6 VDS w 4.5 V, VGS = 4.5 V 4 V 0.046 0.057 VGS = 4.5 V, ID = 2.8 A 0.070 0.094 gfs VDS = 4.5 V, ID = 3.5 A 6.9 VSD IS = 1.25 A, VGS = 0 V 0.8 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 7 Total Gate Charge Qgt 8.5 20 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Forward Transconductancea Diode Forward Voltagea rDS(on) mA A VGS = 10 V, ID = 3.5 A Drain Source On-State Drain-Source On State Resistancea nA W S 1.2 V Dynamicb 1.9 VDS = 15 V,, VGS = 10 V,, ID = 3.5 A nC 1.35 0.5 2.4 W 555 VDS = 15 V,, VGS = 0 V,, f= 1 MHz 120 pF p 60 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 9 20 tr 7.5 18 17 35 5.2 12 td(off) tf VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70827 S-31873—Rev. C, 15-Sep-03 Si2306DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 16 VGS = 10 thru 5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 4V 8 Transfer Characteristics 16 4 8 TC = 125_C 4 25_C 3 thru 1 V 0 - 55_C 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 2 Capacitance 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 700 0.4 0.3 0.2 500 400 300 Coss 200 VGS = 4.5 V 0.1 Ciss 600 VGS = 10 V 100 0.0 Crss 0 0 4 8 12 0 16 6 Gate Charge r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 1.6 VDS = 15V ID = 3.5 A 8 6 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 70827 S-31873—Rev. C, 15-Sep-03 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 12 8 10 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2306DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 0.4 r DS(on) - On-Resistance ( W ) I S - Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.5 10 TJ = 150_C TJ = 25_C 0.3 0.2 ID = 3.5 A 0.1 0.0 1 0.00 0.2 0.4 0.6 1.0 0.8 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 12 ID = 250 mA 0.2 10 8 - 0.0 Power (W) V GS(th) Variance (V) 6 - 0.2 6 - 0.4 4 - 0.6 2 - 0.8 - 50 - 25 0 25 50 75 100 125 TA = 25_C 0 150 0.01 0.1 1 TJ - Temperature (_C) 10 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70827 S-31873—Rev. C, 15-Sep-03