Si9428DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V 6 0.04 @ VGS = 2.5 V 5.2 D1 D1 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G1 Top View S1 Ordering Information: Si9428DY Si9428DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 70_C Operating Junction and Storage Temperature Range V 6 ID 4.8 IDM 20 IS 1.7 TA = 25_C Maximum Power Dissipationa, b Unit A 2.5 PD W 1.6 TJ, Tstg _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol Typical t v10 sec Steady State Maximum 50 RthJA 70 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70810 S-03950—Rev. C, 26-May-03 www.vishay.com 1 Si9428DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 0.6 Typ Max Unit nA Static-0.6 VGS(th) VDS = VGS, ID = 250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) DS( ) VDS w 5 V, VGS = 4.5 V V 20 mA A VGS = 4.5 V, ID = 6 A 0.023 0.03 VGS = 2.5 V, ID = 5.2 A 0.028 0.04 gfs VDS = 10 V, ID = 6 A 24 VSD IS = 1.7 A, VGS = 0 V 0.75 1.2 21 40 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 10 V, VGS = 4.5 V, ID = 6 A 2.9 nC 6.5 1 3.4 td(on) 30 60 tr 70 140 70 140 30 60 70 100 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W IF = 1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70810 S-03950—Rev. C, 26-May-03 Si9428DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 4.5, 4, 3.5, 3, 2.5 V 2V 16 I D - Drain Current (A) I D - Drain Current (A) 15 12 8 4 10 TC = 125_C 5 1.5 V 25_C - 55_C 1, 0 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 Capacitance On-Resistance vs. Drain Current 3000 2500 0.04 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 2.0 VGS - Gate-to-Source Voltage (V) 0.05 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 0.01 2000 1500 Ciss 1000 Coss 500 0.00 Crss 0 0 5 10 15 20 0 ID - Drain Current (A) 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 1.8 5 VDS = 10 V ID = 6 A 4 1.6 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 5 10 15 Qg - Total Gate Charge (nC) Document Number: 70810 S-03950—Rev. C, 26-May-03 20 25 VGS = 4.5 V ID = 6 A 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si9428DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 20 r DS(on)- On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 10 0.08 0.06 0.04 ID = 6 A 0.02 TJ = 25_C 0.00 1 0.2 0.6 0.4 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 4 6 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 0.2 48 - 0.0 Power (W) V GS(th) Variance (V) 2 - 0.2 36 24 - 0.4 12 - 0.6 - 0.8 - 50 0 0 50 100 150 0.01 0.1 TJ - Temperature (_C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70810 S-03950—Rev. C, 26-May-03