VISHAY SI2311DS

Si2311DS
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
–8
D TrenchFETr Power MOSFET
rDS(on) (W)
ID (A)
0.045 @ VGS = –4.5 V
–3.5
0.072 @ VGS = –2.5 V
–2.8
0.120 @ VGS = –1.8 V
–2.0
APPLICATIONS
D Load Switch
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2311DS (C1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
–8
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)
_ a, b
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a, b
IS
TA = 25_C
Maximum Power Dissipation)a, b
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
–3.0
–3.5
–2.8
IDM
Unit
–2.4
A
–10
–0.8
–0.6
0.96
0.71
0.62
0.46
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
100
130
140
175
60
75
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71813
S-05831—Rev. A, 04-Mar-02
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1
Si2311DS
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = –10 mA
–8
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
rDS(on)
–0.8
VDS = 0 V, VGS = "8 V
"100
VDS = –6.4 V, VGS = 0 V
–1
VDS = –6.4 V, VGS = 0 V, TJ = 55_C
–10
VDS v –5 V, VGS = –4.5 V
–6
VDS v –5 V, VGS = –2.5 V
–3
V
nA
m
mA
A
VGS = –4.5 V, ID = –3.5 A
0.036
0.045
VGS = –2.5 V, ID = –3 A
0.058
0.072
0.120
VGS = –1.8 V, ID = –0.7 A
0.096
gfs
VDS = –5 V, ID = –3.5 A
9.0
VSD
IS = –0.8 A, VGS = 0 V
W
S
–1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
8.5
VDS = –4 V, VGS = –4.5 V
ID ^ –3.5 A
12
1.5
nC
2.1
970
VDS = –4 V, VGS = 0, f = 1 MHz
485
pF
160
Switchingb
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
VDD = –4 V, RL = 4 W
ID ^ –1.0 A, VGEN = –4.5 V
RG = 6 W
tf
18
25
45
65
40
60
45
65
ns
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW v300 ms duty cycle v2%.
Switching time is essentially independent of operating temperature.
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Document Number: 71813
S-05831—Rev. A, 04-Mar-02
Si2311DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
12
12
VGS = 4.5 thru 2.5 V
TC = –55_C
10
10
I D – Drain Current (A)
I D – Drain Current (A)
25_C
8
2V
6
1.5 V
4
2
8
125_C
6
4
2
1, 0.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.5
Capacitance
1500
0.25
1250
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
On-Resistance vs. Drain Current
0.20
VGS = 1.8 V
0.15
VGS = 2.5 V
0.05
Ciss
1000
750
Coss
500
250
Crss
VGS = 4.5 V
0.00
0
0
2
4
6
8
10
12
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Gate Charge
On-Resistance vs. Junction Temperature
8
1.4
VDS = 4 V
ID = 3.5 A
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
2.0
VGS – Gate-to-Source Voltage (V)
0.30
0.10
1.5
6
4
2
0
0
2
4
6
8
10
Qg – Total Gate Charge (nC)
Document Number: 71813
S-05831—Rev. A, 04-Mar-02
12
14
VGS = 4.5 V
ID = 3.5 A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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Si2311DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
20
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150_C
1
TJ = 25_C
0.1
0.4
0.3
0.2
ID = 3.5 A
0.1
0.0
0.01
0.00
0.2
0.4
0.6
1.0
0.8
0
1.2
VSD – Source-to-Drain Voltage (V)
2
6
8
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
10
ID = 250 mA
0.3
8
0.2
Power (W)
V GS(th) Variance (V)
4
0.1
6
4
0.0
TA = 25_C
2
–0.1
–0.2
–50
–25
0
25
50
75
100
125
0
0.01
150
0.1
1
TJ – Temperature (_C)
10
100
1000
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 140_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
500
Square Wave Pulse Duration (sec)
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Document Number: 71813
S-05831—Rev. A, 04-Mar-02