Si4820DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4820DY Si4820DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b TA = 25_C Maximum Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range (MOSFET and Schottky) Unit V 10 ID 8 IDM 50 IS 2.3 A 2.5 PD W 1.6 TJ, Tstg _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Symbol Typical t v 10 sec Steady State Maximum Unit 50 RthJA 70 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70806 S-03950—Rev. F, 26-May-03 www.vishay.com 2-1 Si4820DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 25 VDS w 5 V, VGS = 10 V 20 nA mA A VGS = 10 V, ID = 10 A 0.0105 0.0135 VGS = 4.5 V, ID = 5 A 0.0155 0.020 gfs VDS = 15 V, ID = 10 A 28 VSD IS = 2.3 A, VGS = 0 V 0.74 1.2 20 30 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5.0 V, ID = 10 A 8 nC 7 0.5 1.6 td(on) 15 30 tr 8 15 45 90 18 40 50 80 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 2.3 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70806 S-03950—Rev. F, 26-May-03 Si4820DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 30 I D - Drain Current (A) I D - Drain Current (A) 40 4V 20 10 30 20 TC = 125_C 10 25_C 3V - 55_C 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 0.04 2800 0.03 VGS = 4.5 V 5 Ciss 2100 1400 Coss VGS = 10 V 700 0.01 0.00 Crss 0 0 10 20 30 40 50 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 10 A r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 Capacitance 3500 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.05 0.02 3 VGS - Gate-to-Source Voltage (V) 8 6 4 2 VGS = 10 V ID = 10 A 1.4 1.2 1.0 0.8 0 0 8 16 24 Qg - Total Gate Charge (nC) Document Number: 70806 S-03950—Rev. F, 26-May-03 32 40 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si4820DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 TJ = 150_C 10 TJ = 25_C 0.08 ID = 10 A 0.06 0.04 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 0.4 80 ID = 250 mA 60 - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 - 0.6 40 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 TJ - Temperature (_C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 2-4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 30 Document Number: 70806 S-03950—Rev. F, 26-May-03