EXCELICS EIB1819-2P

Excelics
EIA/EIB1819-2P
Not recommended for new designs. Contact factory. Effective 03/2003
18.7-19.7GHz, 2W Internally Matched Power FET
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18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(46dBm TYPICAL)
+33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR
EIA/EIB
6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1819-2P
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
MIN
TYP
Output Power at 1dB Compression f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
32.0
G1dB
Gain at 1dB Compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
5.5
PAE
Power Added Efficiency at 1dB compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Id1dB
Drain Current at 1dB Compression
EIB1819-2P
MAX
MAX
UNIT
MIN
TYP
33.0
32.0
32.5
dBm
6.0
4.5
5.0
dB
25
20
%
880
850
mA
40
46*
dBm
rd
IP3
Output 3 Order Intercept Point
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=12mA
BVgd
Drain Breakdown Voltage Igd=4.8mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
1100
1440
1700
1100
1500
-1.0
-13
1360
1700
700
-2.5
-2.0
-15
-15
8
8
mS
-3.5
*Typical –45dBc IM3 at Pout=23dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
180mA
30mA
Pin
Input Power
32dBm
@ 3dB Compression
Tch
Channel Temperature
175oC
150oC
Tstg
Storage Temperature
-65/175oC
-65/150oC
Total Power Dissipation
17W
14.2W
Pt
mA
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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