EIC5359-4 5.3-5.9 GHz 4-Watt Internally Matched Power FET ISSUED 5/15/2006 FEATURES • • • • • • Excelics 5.3– 5.9GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency Hermetic Metal Flange Package EIC5359-4 YM SN ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 MIN TYP 35.5 36.5 dBm 9.5 10.5 dB Output Power at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 5.3-5.9GHz Drain Current at 1dB Compression Saturated Drain Current VP Pinch-off Voltage f = 5.3-5.9GHz dB % 1200 -43 1400 dBc 2000 2500 VDS = 3 V, IDS = 20 mA -2.5 -4.0 Thermal Resistance mA -46 VDS = 3 V, VGS = 0 V 5.5 2) S.C.L. = Single Carrier Level. UNITS 34 3 Note: 1) Tested with 100 Ohm gate resistor. MAX ±0.6 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=25.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 5.9GHz IDSS RTH Caution! ESD sensitive device. mA V o 6 C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V PARAMETERS Forward Gate Current 43.2mA 14.4mA Reserve Gate Current -7.2mA -2.4mA Input Power 35.5dBm @ 3dB Compression o Channel Temperature 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 25W 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised May 2006