EXCELICS EIM6775-4

EIM6775-4
6.7 – 7.5 GHz Multi-Stage Power Amplifier
ISSUED 12/22/2008
FEATURES
•
•
•
•
6.7– 7.5GHz Operating Frequency Range
36.0dBm Output Power at 2dB Compression
31.0 dB Typical Power Gain @2dB gain compression
Non-Hermetic Metal Flange Package
VD1
EXCELICS
VD2
EIM6775-4
RF IN
RF OUT
-5V
N/C
GND
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, VD1=7V, VD2=10V, Vgg=-5V)
SYMBOL
F
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
7.5
GHz
Operating Frequency Range
6.7
P2dB
Output Power at 2dB Gain Compression
35.0
36.0
dBm
G2dB
Gain @2dB gain compression
29
31
dB
∆Gain
Gain Flatness
±1.0
dB
Input Return Loss
-12
-8
dB
Output Return Loss
-15
-10
dB
Input RL
Output RL
VD1
Drain Supply Voltage 1
7
V
VD2
Drain Supply Voltage 2
10
V
IDQ1
Quiescent Drain Current 1
380
mA
IDQ2
Quiescent Drain Current 2
1800
Vgg
Gate Supply Voltage
Rth
Thermal Resistance
Tb
Operating Base Plate Temperature
2000
mA
V
-5
o
2.4
- 30
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
+ 80
C/W
ºC
page 1 of 3
December 2008
EIM6775-4
6.7 – 7.5 GHz Multi-Stage Power Amplifier
ISSUED 12/22/2008
MAXIMUM RATINGS @25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
1,2
Drain Supply Voltage
1
12V
8V
VD2
Drain Supply Voltage
2
14V
10V
Vgg
Gate Supply Voltage
-10V
-6 V
Igg
Gate Current
150mA
50 mA
PIN
Input Power
20dBm
@ Pout 2dB compression
TCH
Channel Temperature
175°C
175°C
TSTG
Storage Temperature
-65/175°C
-65/175°C
37.5W
37.5W
VD1
PT
Total Power Dissipation
Notes: 1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH
Package Dimension and Pin Assignment
.920
.412
.120 MIN
.206
.827 .669
0.060X0.060
EXCELICS
EIM6775-4
VD1
RF IN
R0.063
(4 PLCS)
VD2
RF OUT
.100
N/C
-5V
.020
GND
.063
.412
.157
.920
.177
.004
.105
Dimensions are in inches
* NC: No connection inside the package
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
December 2008
EIM6775-4
6.7 – 7.5 GHz Multi-Stage Power Amplifier
ISSUED 12/22/2008
Application Note
1. The package should be screwed onto a good heat sink and ground
2. Turn on/off sequence is required:
---to turn on: apply -5V first, then +7V and +10V.
---to turn off: turn +7V and +10V off first, then turn -5V off
3. Recommended External Bias Circuit and Internal Block Diagram
22uF
22uF
0.1uF
0.1uF
VD1
VD2
RF OUT
RF IN
Vgg
NC
0.1uF
22uF
GND
Typical Performance:
TBD
S-PARAMETERS
TBD
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC.
AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
December 2008