EMA110-130F 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 08/10/2005 FEATURES • • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Hermetic 130 mil Ceremic Flange Package Excelics EMA110 -130F DIMENSION: INCH ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETER/TEST CONDITIONS1 SYMBOL Caution! ESD sensitive device. MIN TYP MAX UNITS 3.0 GHz F Operating Frequency Range P1dB Power at 1dB Compression VDD = 8.0V, F = 2.4G 25.5 27.0 dBm Gss Small Signal Gain VDD = 8.0V, F = 2.4G rd Output 3 Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 17dBm VDD = 8.0V, F = 2.4G 9.5 11.0 dB IMD3 RLIN RLOUT 0.5 RTH -42 dBc Input Return Loss VDD = 8.0V -12 -6 dB Output Return Loss VDD = 8.0V -12 -6 dB 240 290 mA Drain Current IDD -45 190 Thermal Resistance1 o 36 C/W Note: 1. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDD Power Supply Voltage 8V VGG Gate Voltage -3 V IDD Drain Current IDSS IGSF Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 2.8 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –THS)/RTH; where THS = temperature of heatsink, and PT = (VDD * IDD) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised August 2005