EXCELICS EMA110

EMA110
0.5 – 3.0 GHz High Linearity Power MMIC
UPDATED 11/11/2004
FEATURES
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0.5 – 3.0 GHz BANDWIDTH
27.0dBm TYPICAL OUTPUT POWER
-45dBc OIMD3 @ 17dBm EACH TONE Pout
11.0 dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC TESTED
Dimension: 760um X 700um
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETER/TEST CONDITIONS1
SYMBOL
Caution! ESD sensitive device.
MIN
TYP
MAX
UNITS
3.0
GHz
F
Operating Frequency Range
P1dB
Power at 1dB Compression
VDD = 8.0V, F = 2.4G
26.0
27.0
dBm
Gss
Small Signal Gain
VDD = 8.0V, F = 2.4G
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 16dBm
VDD = 8.0V, F = 2.4G
10.0
11.0
dB
IMD3
RLIN
RLOUT
0.5
-45
-42
dBc
Input Return Loss
VDD = 8.0V
-12
-8
dB
Output Return Loss
VDD = 8.0V
-12
-8
dB
240
270
mA
IDD
Drain Current
170
RTH
Thermal Resistance1
o
35
C/W
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDD
Power Supply Voltage
8V
VGG
Gate Voltage
-3 V
IDD
Drain Current
IDSS
IGSF
Forward Gate Current
10 mA
PIN
Input Power
PT
Total Power Dissipation
2.8 W
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
@ 3dB compression
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –THS)/RTH; where THS = temperature of heatsink,
and PT = (VDD * IDD) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2004