EMA110 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETER/TEST CONDITIONS1 SYMBOL Caution! ESD sensitive device. MIN TYP MAX UNITS 3.0 GHz F Operating Frequency Range P1dB Power at 1dB Compression VDD = 8.0V, F = 2.4G 26.0 27.0 dBm Gss Small Signal Gain VDD = 8.0V, F = 2.4G Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 16dBm VDD = 8.0V, F = 2.4G 10.0 11.0 dB IMD3 RLIN RLOUT 0.5 -45 -42 dBc Input Return Loss VDD = 8.0V -12 -8 dB Output Return Loss VDD = 8.0V -12 -8 dB 240 270 mA IDD Drain Current 170 RTH Thermal Resistance1 o 35 C/W Note: 1. Overall Rth depends on die attach. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDD Power Supply Voltage 8V VGG Gate Voltage -3 V IDD Drain Current IDSS IGSF Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 2.8 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –THS)/RTH; where THS = temperature of heatsink, and PT = (VDD * IDD) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004