EIC1212-8 12.20-12.70 GHz 8-Watt Internally Matched Power FET UPDATED 01/04/2006 Excelics FEATURES • • • • • • • • 12.20– 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH P1dB G1dB ∆G PAE .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .168±.010 .004 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL .024 EIC1212-8 .827±.010 .669 Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA MIN TYP MAX 38.5 39.0 dBm 5.5 6.5 dB ±0.6 IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 12.70GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 4000 5000 VP Pinch-off Voltage VDS = 3 V, IDS = 40 mA -2.5 -4.0 RTH f = 12.20-12.70GHz Thermal Resistance 2300 % Drain Current at 1dB Compression Note: 1) Tested with 100 Ohm gate resistor. -43 2600 mA -46 3.5 2) S.C.L. = Single Carrier Level. dB 27 Id1dB 3 UNITS dBc 4.0 mA V o C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL Notes: 1. 2. CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -4.5 V IDS Drain Current IDSS IGSF Forward Gate Current 80 mA PIN Input Power PT Total Power Dissipation 38 W TCH Channel Temperature 175°C TSTG Storage Temperature -65/+175°C @ 3dB compression Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2006