EPA120D-CP083 High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +29 dBm OUTPUT POWER AT 1dB COMPRESSION 18.0 dB GAIN AT 2 GHz 0.5x1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 120D • PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 27.5 29.0 29.0 18.0 13.0 16.5 MAX UNITS dBm dB 44 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 210 360 GM Transconductance VDS = 3 V, VGS = 0 V 240 380 VP Pinch-off Voltage VDS = 3 V, IDS = 3.6 mA -1.0 % 510 mA mS -2.5 V BVGD Drain Breakdown Voltage IGD = 1.2 mA -13 -15 V BVGS Source Breakdown Voltage IGS = 1.2 mA -7 -14 V RTH* Thermal Resistance 45 50 o C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 5.4 mA 0.9 mA 26 dBm 175oC -65/175oC 3.0 W 8V -3V 1.8 mA 0.3 mA @ 3dB Compression 175oC -65/175oC 3.0 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2006