EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 12/06/2005 .060 MIN. FEATURES • • • • • • .650±.008 .512 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package G1dB ∆G PAE IDSS Saturated Drain Current VP Pinch-off Voltage RTH .045 .094 .382 .004 .070 ±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. MIN TYP 36.5 37.5 dBm 9.0 10.0 dB Output Power at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression .022 YM PARAMETERS/TEST CONDITIONS1 Id1dB .319 DRAIN GATE SN ELECTRICAL CHARACTERISTICS (Ta = 25°C) P1dB .060 MIN. EIA1111-6 .129 SYMBOL Excelics MAX UNITS ±0.6 dB 35 f = 11.0-11.5GHz % 1800 2100 mA VDS = 3 V, VGS = 0 V 2800 3500 mA VDS = 3 V, IDS = 28 mA -1.0 -2.5 3 Thermal Resistance 4.5 Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 5.0 V o C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12 8V Gate-Source Voltage -5 -3V Drain Current IDSS 3.5A PARAMETERS Forward Gate Current 43.2mA 14.4mA Reserve Gate Current -7.2mA -2.4mA Input Power 36.5dBm @ 3dB Compression o Channel Temperature 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 30W 30W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2005