REF1112 SBOS283C – SEPTEMBER 2003 – REVISED MARCH 2008 10ppm/°C, 1µA, 1.25V SHUNT VOLTAGE REFERENCE FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● MICRO-PACKAGE: SOT23-3 WIDE CURRENT RANGE: 1µA to 5mA HIGH INITIAL ACCURACY: 0.2% EXCELLENT SPECIFIED DRIFT PERFORMANCE: 30ppm/°C (max) from 0°C to +70°C 50ppm/°C (max) from –40°C to +85°C BATTERY-POWERED INSTRUMENTS PORTABLE DEVICES MEDICAL EQUIPMENT CURRENT SOURCES CALIBRATORS MICROPOWER CURRENT AND VOLTAGE REFERENCE DESCRIPTION VS The REF1112 is a two-terminal shunt reference designed for power- and space-sensitive applications. The REF1112 features an operating current of 1mA in a SOT23-3 package and is an improved, lower power solution for designs currently using voltage references in larger packages, such as the REF1004 and LT1004. The REF1112 is specified from –40°C to +85°C with operation extending from –40°C to +125°C. IREF + ILOAD RBIAS ILOAD VOUT IREF RLOAD The REF1112 complements other 1µA components from Texas Instruments including the OPA349 and the TLV240x low-power operational amplifiers, and the TLV349x RBIAS = micropower voltage comparator. VS − V D ILOAD + IREF VO 1 3 NC GND 2 SOT23 NC indicates pin should be left unconnected. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. Copyright © 2003-2008, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. www.ti.com ABSOLUTE MAXIMUM RATINGS(1) ELECTROSTATIC DISCHARGE SENSITIVITY Reverse Breakdown Current ............................................................ 10mA Forward Current ................................................................................ 10mA Operating Temperature .................................................. –55°C to +125°C Storage Temperature ...................................................... –65°C to +150°C Junction Temperature .................................................................... +150°C Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. Texas Instruments recommends that all integrated circuits be handled and stored using appropriate ESD protection methods. (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. PACKAGE/ORDERING INFORMATION(1) PRODUCT REF1112 PACKAGE-LEAD PACKAGE DESIGNATOR SPECIFIED TEMPERATURE RANGE PACKAGE MARKING SOT23-3 DBZ –40°C to +125°C R11A REF1112AIDBZT Tape and Reel, 250 " " " " REF1112AIDBZR Tape and Reel, 3000 " ORDERING NUMBER TRANSPORT MEDIA, QUANTITY NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. At TA = +25°C, IREF = 1.2µA and CLOAD = 10nF, unless otherwise noted. REF1112 - 1.25V PARAMETER CONDITIONS REVERSE BREAKDOWN VOLTAGE MIN TYP MAX UNITS 1.2475 –0.2 1.25 1.2525 +0.2 V % 10 15 15 30 50 ppm/°C ppm/°C ppm/°C IREF = 1.2µA TEMPERATURE COEFFICIENT 1.2µA ≤ IREF ≤ 5mA, 0°C to +70°C 1.5µA ≤ IREF ≤ 5mA, –40°C to +85°C 1.5µA ≤ IREF ≤ 5mA, –40°C to +125°C MINIMUM OPERATING CURRENT 1 1.2 µA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT 30 100 ppm/mA 1.2µA ≤ IREF ≤ 5mA REVERSE DYNAMIC IMPEDANCE 1.2µA ≤ IREF ≤ 5mA 0.037 0.125 Ω LOW-FREQUENCY NOISE(1) 0.1Hz ≤ IREF ≤ 10Hz THERMAL HYSTERESIS(2) 25 µVPP 100 ppm 60 ppm/kHr LONG-TERM STABILITY +25°C ± 0.1°C TEMPERATURE CHARACTERISTICS Specified Range Operating Range Storage Range Thermal Resistance SOT23-3 Surface-Mount –40 –40 –40 +125 +125 +150 θJA 135 °C °C °C °C/W (1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz. (2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range, and returning to +25°C. 2 REF1112 www.ti.com SBOS283C TYPICAL CHARACTERISTICS At TA = +25°C, IREF = 10µA and CLOAD = 10nF, unless otherwise noted. REVERSE CHARACTERISTICS 10K FORWARD CHARACTERISTICS 1.0 −40°C ≤ TA ≤ 125°C TA = 25°C 0.8 Voltage Regulation Region 100 Forward Voltage (V) Reverse Current (µA) 1K 10 1 0.6 0.2 0.1 0.01 0.00 Behaves as standard silicon diode 0.4 0.0 0.25 0.50 0.75 1.00 1.25 1.50 0.001 0.01 Reverse Voltage (V) 10 REVERSE VOLTAGE CHANGE vs CURRENT TEMPERATURE DRIFT 1.255 Output Voltage Change (mV) 0.5 1.254 Reverse Voltage (V) 0.1 1.0 Forward Current (mA) 1.253 1.252 1.251 1.250 −40°C ≤ TA ≤ 125°C 0.4 0.3 0.2 0.1 1.249 1.248 −55 0.0 −35 −15 5 25 45 65 85 105 0.001 125 0.01 Temperature (°C) 1 10 REVERSE DYNAMIC IMPEDANCE REVERSE DYNAMIC IMPEDANCE 100 10k −40°C ≤ TA ≤ 125°C TA = +25°C f = 10Hz 10 Dynamic Impedance (Ω) Dynamic Impedance (Ω) 0.1 Reverse Current (mA) 1 0.1 1k IREF = 10µA 100 10 IREF = 5mA 1 0.1 0.01 0.01 0.001 0.01 0.1 1 1 10 Reverse Current (mA) REF1112 SBOS283C www.ti.com 10 100 1k Frequency (Hz) 10k 100k 3 TYPICAL CHARACTERISTICS (Continued) At TA = +25°C, IREF = 10µA and CLOAD = 10nF, unless otherwise noted. REVERSE BREAKDOWN VOLTAGE DISTRIBUTION TEMPERATURE DRIFT DISTRIBUTION 25 50 0°C to +70°C 40 Distribution (%) Distribution (%) 20 15 10 5 30 20 10 0 0 1.2475 1.2500 1.2525 0 5 10 15 20 25 30 Reverse Breakdown Voltage (V) Drift (ppm/°C) TEMPERATURE DRIFT DISTRIBUTION LOW-FREQUENCY NOISE, 0.1 to 10Hz 35 25 −40°C to +85°C 15 10µV/div Distribution (%) 20 10 5 0 0 5 10 15 20 25 30 Drift (ppm/°C) 35 40 45 50 1.0s/div RESPONSE TIME RESPONSE TIME CLOAD = 0.01µF CLOAD = 0.1µF 2V 2V 1V VIN VOUT 0V VOUT 0.01µF 5V 0V IREF 375kΩ VOUT 0.1µF 5V VIN VIN 0V 0V 10ms/div 4 VIN VOUT 375kΩ Voltage (V) Voltage (V) 1V 25ms/div REF1112 www.ti.com SBOS283C APPLICATIONS INFORMATION VS The REF1112 is a two-terminal bandgap reference diode designed for high accuracy with outstanding temperature characteristics at low operating currents. Precision thin-film resistors result in 0.2% initial voltage accuracy and 50ppm/°C maximum temperature drift. The REF1112 is specified from –40°C to +85°C, with operation from –40°C to +125°C, and is offered in a SOT23-3 package. Typical connections for the REF1112 are shown in Figure 1. A minimum 1µA bias current is required to maintain a stable output voltage and can be provided with a resistor connected to the supply voltage. IBIAS depends on the values selected for RBIAS and VS, and will vary as a sum of the minimum operating current and the load current. To maintain stable operation, the value of RBIAS must be low enough to maintain the minimum operating current at the minimum and maximum load and supply voltage levels. 10kΩ ISET ISET = 0.1µF VREF RSET RSET FIGURE 2. REF1112 Provides a Stable Current Source. 3V VS 795kΩ RBIAS 250kΩ VREF IBIAS = IREF + ILOAD VREF 1µF 3V 0.1µF TLV2401 REF1112 1MΩ ILOAD 0.1µF IREF IBIAS = VS − VREF RBIAS FIGURE 3. MicroPOWER 3µA 1V Voltage Reference. FIGURE 1. Typical Connections. A 0.1µF load capacitor is recommended to maintain stability under varying load conditions. A minimum 0.01µF load capacitor is required for stable operation. Start-up time for the REF1112 will be affected, depending on the value of load capacitance and the bias currents being used. A 1µF power-supply bypass capacitor is recommended to minimize supply noise within the circuit. The REF1112 shunt voltage reference provides a versatile function for low power and space-conservative applications. The REF1112 can be configured with an additional diode and NPN transistor to provide a temperature compensated current reference as shown in Figure 2. The REF112 can be scaled to provide extremely low power reference voltages. Figure 3 shows the REF1112 used as a 1V out, 3µA voltage reference, and in Figure 4 as a 2.5V reference on 1µA. 3V RSET VOUT = 2.5V 0.1µF RLOAD 0.1µF FIGURE 4. 2.5V Reference on 1µA. REF1112 SBOS283C VOUT = 1V www.ti.com 5 For applications requiring a stable voltage reference capable of sinking higher than 5mA of current, a REF1112 combined with an OPA347 can sink up to 10mA of current. This configuration is shown in Figure 5, and through appropriate selection of R1 and R2, can be used to provide a wide range of stable reference voltages. The REF1112 is also useful for level shifting, and as shown in Figure 6, can be used to achieve the full input range of an analog-to-digital converter (ADC). VS RSET IBIAS 2.5V R1 10kΩ 10kΩ 0.01µF OPA347 1.25V 0.1µF VOUT = 1.25 (1 + R1 / R2) R2 10kΩ FIGURE 5. Adjustable Voltage Shunt Reference. VS VREF VOUT +V 1.25V ADC 0.1µF VIN −V FIGURE 6. REF1112 Provides a Level Shift to Achieve Full ADC Input Range. 6 REF1112 www.ti.com SBOS283C PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) REF1112AIDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 R11A REF1112AIDBZRG4 ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 R11A REF1112AIDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 R11A REF1112AIDBZTG4 ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 R11A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) REF1112AIDBZR SOT-23 DBZ 3 3000 179.0 8.4 REF1112AIDBZT SOT-23 DBZ 3 250 179.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3.15 2.95 1.22 4.0 8.0 Q3 3.15 2.95 1.22 4.0 8.0 Q3 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) REF1112AIDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 REF1112AIDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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