LL4150 Formosa MS High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type tp=1µ s VR =0 Symbol VRRM VR IFSM IF IFAV PV Tj Tstg Value 50 40 4 600 300 500 175 -65~+175 Unit V V A mA mA mW ? ? Value 500 Unit K/W Maximum Thermal Resistance Tj=25? Parameter Junction ambient Test Conditions on PC board 50mm× 50mm× 1.6mm Formosa MS Symbol RthJA 1 LL4150 Formosa MS Electrical Characteristics Tj=25? Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Test Conditions IF =1mA IF =10mA IF =50mA IF =100mA IF =200mA VR =50V VR =50V, Tj=150? VR =0, f=1MHz, VHF =50mV IF = IR =10… 100mA, iR =1mA, RL=100O Type Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA µ A pF ns Dimensions in mm Cathode band Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA Formosa MS 2