WILLAS MM4148,MM4448 Mini Melf Switching diode Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively D Weight:0.03g SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Applications Extreme fast switches Pb Free Product S SOD-323(SC-76) .012 (0.3) .004 (0.1) max. .049 (1.25) max. Top View Parameter Test Conditions Type Repetitive peak reverse voltage Dimensions in inches Reverse voltage and (millimeters) Peak forward surge current tp=1ms .059 (1.5) AL DATA Repetitive peak forward current .043 (1.1) Forward current , JEDEC SOD-323(SC-76) Average forward current VR=0 ated, solderable per MIL-STD-750, Power dissipation 026 Operating junction temperature y cathode band Storage temperature range Any uction Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 100 75 2 500 300 150 500 -65~175 -65~175 Unit V V A mA mA mA mW °C °C Symbol RthJA Value 500 Unit K/W .006 (0.15) max. .065 (1.65) Cathode Band .076 (1.95) .112 (2.85) Tj = 25_C .100 (2.55) Absolute Maximum Ratings age .010 (0.25) min. unce, 0.0045 gram Maximum Thermal Resistance Marking Code: JV or 4 Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm M RATING AND ELECTRICAL CHARACTERISTICS temperature unless otherwise specified. e, 60Hz, resistive of inductive load. erate current by 20% Conditions er rse Voltage urrent terminals e Min. Typ. VRM Voltage ent Symbol Max. Unit 45 V V VR 40 I F = 10mA DC VF1 0.34 V I F = 100mA DC VF2 0.55 V VR = 10V DC IR 30 µ A 2012-10 IO 0.1 A A WILLAS ELEECTRONIC CORP. IFSM 1 CT 6.0 pF 125 o TJ TSTG -40 +125 C C o WILLAS MM4148,MM4448 Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery y time Test Conditions IF=5mA IF= 50mA IF=100mA VR=20V VR=20V, Tj=150°C VR=75V IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV VHF=2V, f=100MHz IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100 Type Symbol VF VF VF IR IR IR V(BR) MM4448 MM4148 MM4448 Min 0.62 Typ 0.86 0.93 Unit V V V nA mA mA V 4 pF 8 4 % ns ns 100 CD hr 45 trr trr W Max 0.72 1 1 25 50 5 Typical Characteristics (Tj = 25_C unless otherwise specified) 1000 1000 MM4448 IF – Forward Current ( mA ) IF – Forward Current ( mA ) MM4148 100 10 1 0.1 100 10 1 Tj = 25°C 0 0.4 0.8 1.2 1.6 2.0 VF – Forward Voltage ( V ) 94 9096 0.1 1.2 1.6 2.0 VF – Forward Voltage ( V ) Tj = 25°C 10 1 10 2.0 1.5 1.0 0.5 0 100 VR – Reverse Voltage ( V ) Figure 3. Reverse Current vs. Reverse Voltage f = 1 MHz Tj = 25°C 2.5 CD – Diode Capacitance ( pF ) IR – Reverse Current ( nA ) 0.8 3.0 100 2012-10 0.4 Figure 2. Forward Current vs. Forward Voltage 1000 94 9098 0 94 9097 Figure 1. Forward Current vs. Forward Voltage 1 Tj = 25°C 94 9099 0.1 1 10 100 VR – Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage WILLAS ELEECTRONIC CORP. POWER DISSIPATION, mW WILLAS MM4148,MM4448 500 300 100 0 100 200 AMBIENT TEMPERATURE Figure 5. Derating Curve Dimensions in mm 0.4 2012-10 0.1 WILLAS ELEECTRONIC CORP.