Silicon Epitaxial Planar Diodes

LL4148/LL4448
High-speed switching diode
Features
1. Small surface mounting type
2. High reliability
3. High speed (trr
4 ns)
Applications
Extreme fast switches
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
tp=1
Type
s
VR=0
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
PV
Tj
Tstg
Value
100
75
2
500
300
150
500
175
-65~+175
Unit
V
V
A
mA
mA
mA
mW
Value
500
Unit
K/W
Maximum Thermal Resistance
Tj=25
Parameter
Junction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
GOODWORK
Symbol
RthJA
1
LL4148/LL4448
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Reverse current
Breakdown current
Diode capacitance
Rectification efficiency
Reverse recovery time
Test Conditions
Type
IF=5mA
IF=10mA
IF=100mA
VR=20V
VR=20V, Tj=150
VR=75V
IR=100 A,tp/T=0.01,tp=0.3ms
VR=0, f=1MHz, VHF=50mV
VHF=2V, f=100MHz
IF= IR=10mA, iR=1mA
IF=10mA, VR=6V, iR=0.1 IR,
RL=100
LL4148
LL4148
LL4448
Characteristics (Tj=25
Sym
bol
VF
VF
VF
IR
IR
IR
V(BR)
CD
R
trr
trr
Min
Typ
0.62
0.86
0.93
Max
Unit
0.72
1
1
25
50
5
V
V
V
nA
A
A
V
pF
%
ns
ns
100
4
45
8
4
unless otherwise specified)
GOODWORK
2
LL4148/LL4448
Dimensions in mm
Cathode band
Glass Case
Mini Melf / LL-34
GOODWORK
3