SSFP5N20
StarMOST Power MOSFET
■
Extremely high dv/dt capability
■
Low Gate Charge Qg results in
VDSS = 200V
Simple Drive Requirement
ID25 =5A
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
RDS(ON) =0.8Ω
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
Pin1–Gate
with planar stripe DMOS technology.
Pin2–Drain
Pin1–Source
Application
■
Switching application
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25ْ C
Continuous Drain Current,VGS@10V
5.0
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
3.0
IDM
Pulsed Drain Current
20
PD@TC=25ْC
Power Dissipation
①
Units
A
40
W
Linear Derating Factor
0.32
W/ْ C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
85
mJ
IAR
Avalanche Current
6.0
A
EAR
Repetitive Avalanche Energy
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
－
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
②
①
①
③
–25 to +150
ْC
300(1.6mm from case)
Soldering Temperature, for 10 seconds
10 Ibf in(1.1N m)
Mounting Torque,6-32 or M3 screw
●
●
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
3.12
RθCS
Case-to-Sink,Flat,Greased Surface
—
－
0.5
RθJA
Junction-to-Ambient
—
—
80
Units
ْC/W
1
SSFP5N20
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
Typ.
200
—
Max. Units
—
—
－
V
Test Conditions
VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient
—
RDS(on)
Static Drain-to-Source On-resistance
—
－
0.8
Ω VGS=10V,ID=2.5A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
gfs
Forward Transconductance
1.3
－
—
S
VDS=10V,ID=2.5A
—
—
250
—
—
1000
Gate-to-Source Forward leakage
—
—
500
Gate-to-Source Reverse leakage
—
—
-500
Qg
Total Gate Charge
—
11
15
Qgs
Gate-to-Source charge
—
5.0
—
Qgd
Gate-to-Drain("Miller") charge
—
6.0
—
td(on)
Turn-on Delay Time
—
－
40
tr
Rise Time
—
－
60
td(off)
Turn-Off Delay Time
—
－
100
tf
Fall Time
—
－
60
IDSS
Drain-to-Source Leakage current
IGSS
LD
Internal Drain Inductance
—
4.5
—
LS
Internal Source Inductance
－
7.5
—
Ciss
Input Capacitance
—
600
—
Coss
Output Capacitance
—
300
—
Crss
Reverse Transfer Capacitance
—
80
—
V/ْC Reference to 25ْC,ID=1mA
VDS=Rated VDSS,VGS=0V
μA VDS=0.8×Rated VDSS,
VGS=0V,TJ=125ْC
nA
VGS=20V
VGS=-20V
VGS=10V
nC ID=6.0A
VDD=45V
VDD=100V
ID=2.5A
nS
VGS=10V
RGEN=50Ω
RGS=50Ω
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ①
.
VSD
Min.
Typ.
Max.
—
—
5.0
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
20
Diode Forward Voltage
—
—
1.8
V
TJ=25ْC,IS=5.0A,VGS=0V ④
trr
Reverse Recovery Time
－
350
－
nS
Qrr
Reverse Recovery Charge
－
2.3
－
nC
TJ=25ْC,IS=5.0A
di/dt=25A/μs ④
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
③ ISD≤5A,di/dt≤60A/μS,VDD≤V(BR)DSS,
TJ≤150ْ C
② L =6.18mH, IAS = 5.0A, VDD = 10V,
④ Pulse width≤300μS; duty cycle≤2%
RG = 25Ω, Starting TJ = 25°C
2