PHOTO IC Photo IC diode S9066-111, S9067-101 Spectral response close to human eye sensitivity The S9066-111, S9067-101 photo ICs have spectral response close to human eye sensitivity. Two active areas are made on a single chip. One is for detecting light in the visible to near infrared range and the other is only sensitive to near infrared light and used for output signal correction. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to previously available devices, these photo ICs offer lower output fluctuations for light sources producing the same illuminance at different color temperatures. Features Applications l Spectral response close to human eye sensitivity is attained without using visual-compensated filter. l Operation just as easy to use as a photodiode l Large output current equivalent to phototransistors l Lower output-current fluctuations l Excellent linearity l Low output fluctuations for light sources producing the l Energy-saving sensor for TVs, etc. l Light dimmers for liquid crystal panels l Cellular phone backlight dimmers l Various types of light level measurement same illuminance at different color temperatures ■ Absolute maximum ratings (Ta=25 °C) Parameter Symbol S9066-111 Reverse voltage VR -0.5 to 12 Photocurrent IL 5 Forward current IF 5 Power dissipation *1 P 250 Operating temperature Topr -30 to +80 Storage temperature Tstg -40 to +85 *1: Derate power dissipation at a rate of the following rate above Ta=25 °C. S9066-111: -3.3 mW/°C, S9067-101: -2.0 mW/°C S9067-101 150 Unit V mA mA mW °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range λ λp Peak sensitivity wavelength Dark current ID Photocurrent IL Rise time *2 tr Fall time *2 tf *2: Rise/fall time measurement method Condition VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90 %, VR=7.5 V RL=10 kΩ, λ=560 nm PULSED LIGHT FROM LED (l=560 nm) S9066-111 Typ. Max. 300 to 820 560 1.0 50 0.19 0.27 0.35 6.0 2.5 Min. S9067-101 Typ. Max. 300 to 820 560 1.0 50 0.18 0.26 0.34 6.0 2.5 Min. Unit nm nm nA mA ms ms 2.5 V 90 % VO 10 % 0.1 µF 7.5 V tr tf VO LOAD RESISTANCE RL KPICC0041EA 1 Photo IC diode ■ Spectral response S9066-111, S9067-101 ■ Linearity (S9066-111) (Typ. Ta=25 ˚C, VR=5 V) 1.0 ■ Dark current vs. ambient temperature (Typ. Ta=25 ˚C, VR=5 V, 2856 K) 10 mA (Typ. VR=5 V) 10 µA 0.9 HUMAN EYE SENSITIVITY 1 mA 0.6 0.5 S9066-111 S9067-101 0.4 0.3 1 µA DARK CURRENT 0.7 PHOTO CURRENT RELATIVE SENSITIVITY 0.8 100 µA 10 µA 1 µA 100 nA 10 nA 0.2 1 nA 100 nA 0.1 0 200 400 600 1000 800 10 nA 0.1 1200 1 WAVELENGTH (nm) 10 100 100 pA 1000 0 ■ Rise/fall times vs. load resistance 50 75 100 AMBIENT TEMPERATURE (˚C) KPICB0083EB KPICB0078EC KPICB0076EB ■ Operating circuit example (Typ. Ta=25 ˚C, VR=7.5 V, λ=560 nm, Vo=2.5 V) 1000 PHOTODIODE FOR SIGNAL DETECTION PHOTODIODE FOR SIGNAL OFFSET The photo IC diode must be reversebiased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. CATHODE RISE/FALL TIME (ms) 25 ILLUMINANCE (lx) 100 tr 10 THE DRAWING SURROUNDED BY THE DOTTED LINE SHOWS A SCHEMATIC DIAGRAM OF THE PHOTO IC. tf INTERNAL PROTECTION RESISTANCE (APPROX. 150 W) REVERSE BIAS POWER SUPPLY CURRENT AMP (APPROX. 30000 times) 1 ANODE CL 0.1 100 1k 100 k 10 k Vout . Cut-off frequency fc = . RL 1M LOAD RESISTANCE (Ω) 1 2πCLRL KPICC0091EB KPICB0115EA ■ Dimensional outlines (unit: mm) S9066-111 S9067-101 3.2 ± 0.2 CENTER OF ACTIVE AREA ACTIVE AREA 0.46 × 0.32 0.4 2.05 ± 0.2 16.5 ± 1.0 5˚ 5˚ ANODE (ANODE) NC CATHODE CATHODE ANODE 2.3 10˚ 0.75 ± 0.15 10˚ 0.6 0.25 +0.15 -0.1 1.27 1.27 1.27 2.0 ± 0.1 0.25 ± 0.15 (0.8) PHOTOSENSITIVE SURFACE (SPECIFIED AT THE LEAD ROOT) PHOTOSENSITIVE SURFACE 2.7 1.4 ± 0.1 5˚ 10˚ 5˚ CENTER OF ACTIVE AREA ACTIVE AREA 0.32 × 0.46 (4 ×) 0.55 (4 ×) 0.45 (4 ×) 0.5 2.0 (DEPTH 0.15) 10˚ 5.2 ± 0.3 (INCLUDIG BURR) (2 ×) 1.0 (DEPTH 0.15) 0.4 0.13 1.0 1.2 ± 0.2 (1.0) 5.0 2.5 ± 0.2 2.0 1.1 ± 0.1 5.2 ± 0.3 (INCLUDIG BURR) 5.0 Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Values in parentheses indicate reference value. Tolerance unless otherwise noted: ±0.2 Active area position accuracy: X, Y£±0.3 Electrodes 2.2 KPICA0050EE KPICA0051EC Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIC1052E05 Feb. 2008 DN