Si PIN photodiode S12158-01CT COB type, applicable to lead-free solder reflow The S12158-01CT is a Si PIN photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and thin leadless package allows reducing the mount area on a printed circuit board. Features Applications COB type, small and thin leadless package FSO (free space optics) Applicable to lead-free solder reflow Optical switches Photosensitive area: 2.77 × 2.77 mm Laser radar, etc. High sensitivity: 0.7 A/W (λ=960 nm) Structure Parameter Photosensitive area Package Seal material Specification 2.77 × 2.77 Glass epoxy Epoxy resin Unit mm - Value 20 -25 to +85 -40 to +100 Peak temperature 260 °C, 2 times (see page 4) Unit V °C °C - Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Reflow soldering conditions*1 Symbol VR max Topr Tstg Tsol Condition Ta=25 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: JEDEC level 4 Electrical and optical characterisitcs (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of ID Symbol λ λp S ID TCID Cutoff frequency fc Terminal capacitance Ct Condition λ=λp VR=12 VR=12 VR=12 -3 dB VR=12 V V V, RL=50 Ω V, f=1 MHz Min. 0.6 - Typ. 320 to 1100 960 0.7 0.1 1.15 Max. 10 - Unit nm nm A/W nA times/°C 10 25 - MHz - 15 30 pF www.hamamatsu.com 1 Si PIN photodiode S12158-01CT Spectral response Dark current vs. reverse voltage (Typ. Ta=25 °C) 0.8 (Typ. Ta=25 °C) 10 nA 0.6 1 nA QE=100% 0.5 Dark current Photosensitivity (A/W) 0.7 0.4 0.3 0.2 100 pA 10 pA 0.1 0 200 400 600 800 1000 1 pA 0.01 1200 0.1 1 10 Reverse voltage (V) Wavelength (nm) KPINB0380EA KPINB0381EA Terminal capacitance vs. reverse voltage Dark current vs. ambient temperature (Typ. Ta=25 °C) 1 nF 100 (Typ. Ta=25 °C, VR=12 V) 10 μA 100 nA 100 pF Dark current Terminal capacitance 1 μA 10 pF 10 nA 1 nA 100 pA 10 pA 1 pA 1 pF 0.1 1 10 100 Reverse voltage (V) 100 fA -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ambient temperature (°C) KPINB0382EA KPINB0384EA 2 Si PIN photodiode S12158-01CT Directivity 30° 20° Y direction (Typ. Ta=25 °C, light source: tungsten lamp) 10° 0° 10° 20° 30° 40° 40° 50° 50° 60° 60° 70° X direction 70° 80° X, Y direction 90° 100 80 60 80° 40 20 0 20 40 90° 80 100 60 Relative sensitivity (%) KPINB0383EA Dimensional outline (unit: mm) 0.3 Center of photosensitive area 4.2* 0.3 (0.5) 1.12 ± 0.2 Photosensitive surface Index mark 0.25 4.2* Photosensitive area (2.77 × 2.77) (1.1) 2.0 0.3 0.7 0.45 Anode (common) Cathode (common) 2.7 0.75 Tolerance unless otherwise noted: ±0.1, ±2° Chip position accuracy with respect to package dimensions marked* X, Y≤±0.2, θ≤±2° Standard packing state: reel (2000 pcs/reel) KPINA0113EA Product orientation on reel Index mark Reel feed direction KPINC0020EA 3 Si PIN photodiode S12158-01CT Recommended land pattern (unit: mm) 1.0 1.0 0.9 1.35 3.85 KPINC0019EA Recommended temperature profile of reflow soldering (typical example) 260 °C max. Temperature 230 °C min. 190 °C 170 °C Heating 20 to 40 s Preheating 60 to 120 s Time KPINB0385EA · After unpacking, store this device in an environment at a temperature of 5 to 30 °C and a humidity below 70%, and perform reflow soldering on this device within 72 hours. · The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual cleaning, check for any problems by testing out the cleaning methods in advance. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second. Information described in this material is current as of October, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1084E01 Oct. 2012 DN 4