HANBit HMF2M32F4VA Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VA GENERAL DESCRIPTION The HMF2M32F4VA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-compatible. FEATURES PIN ASSIGNMENT w Part Identification P1 - HMF2M32F4VA : Socket 5mm P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol w Access time: 80, 90, 120ns 1 Vcc 21 Vcc 1 Vcc 21 Vcc w High-density 8MByte design 2 /CE0 22 DQ15 2 DQ16 22 NC w High-reliability, low-power design 3 NC 23 DQ7 3 DQ24 23 NC w Single + 3.0V ± 0.3V power supply 4 NC 24 DQ14 4 DQ17 24 /BYTE w All in/outputs are LVTTL-compatible 5 NC 25 DQ6 5 DQ25 25 /OE w FR4-PCB design 6 RY_/BY 26 DQ13 6 DQ18 26 /CE1 w 80-pin Designed by 7 Vss 27 Vss 7 Vss 27 Vss 40-pin Fine Pitch Connector (x 2EA) 8 /RESET 28 DQ5 8 DQ26 28 A16 w Minimum 1,000,000 write/erase cycle 9 /WE 29 DQ12 9 DQ19 29 A0 w Sector erases architecture 10 A19 30 DQ4 10 DQ27 30 A18 11 A8 31 DQ11 11 DQ20 31 A17 12 A9 32 DQ3 12 DQ28 32 A7 13 A10 33 DQ10 13 DQ21 33 A6 -80 14 Vss 34 Vss 14 Vss 34 Vss 90ns access -90 15 A11 35 DQ2 15 DQ29 35 A5 120ns access -120 16 A12 36 DQ9 16 DQ22 36 A4 17 A13 37 DQ1 17 DQ30 37 A3 18 A14 38 DQ8 18 DQ23 38 A2 19 A15 39 DQ0 19 DQ31 39 A1 20 Vcc 40 Vcc 20 Vcc 40 Vcc OPTIONS MARKING w Timing 80ns access w Packages 80-pin SMM URL: www.hbe.co.kr REV.02(August,2002) F 1 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA FUNCTIONAL BLOCK DIAGRAM 32 DQ31 – DQ0 20 A(0-19) A0 – A19 /WE DQ(0-15) /OE U1 /CE RY-BY /Reset A(0-19) DQ(16-31) /WE U2 /OE /CE0 /CE RY-BY /Reset A(0-19) DQ(0-15) /WE U3 /OE /CE RY-BY /Reset A(0-19) DQ(16-31) /WE /WE /OE /OE /CE /CE1 URL: www.hbe.co.kr REV.02(August,2002) U4 RY_/BY RY-BY /Reset /Reset 2 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -40oC to +85oC w Stresses greater than those listed und er " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is n ot implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ± 10% device Supply Voltages Vcc 2.7V 3.0 3.6V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 -10 1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 -10 1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH 0.85x Vcc - V Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL - 0.45 V - 64 - 16 /CE = VIL, 5MHZ Vcc Active Read Current (1) ICC1 /OE = VIH, 1MHZ mA Vcc Active Write Current (2) /CE = V IL, /OE=VIH ICC2 - 120 mA Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 - 20 µA VLKO 2.3 2.5 V Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Not 100% tested URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Block Erase Time - Chip Erase Time TYP. MAX. 0.7 15 25 COMMENTS Excludes 00H programming prior to erasure sec sec Word Programming Time - 11 360 µs Chip Programming Time - 12 36 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Capacitance is periodically sampled and not 100% tested. TEST SPECIFICATIONS TEST CONDITION VALUE Output load UNIT 1TTL gate Input rise and full times 5 ns 0 to 3 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION - 80 MIN -90 MAX MAX 90 MIN MAX tRC Read Cycle Time tACC Address Access time 80 90 120 ns tCE Chip Enable to Access time 80 90 120 ns tOE Output Enable time 30 35 50 ns tDF Chip Enable to Output High-Z 25 30 30 ns tOEH Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE tQH 80 MIN UNIT -120 120 ns 0 0 0 ns 0 0 0 ns u Erase/Program Operations Alternate /WE Controlled Writes - 80 PARAMETER DESCRIPTION -90 MIN MAX MIN Write Cycle Time (1) 80 - Address Setup Time 0 - tAH Address Hold Time 45 tDS Data Setup Time tWC tAS tDH tOES tGHWL tCS -120 MAX MIN MAX 90 - 120 - ns 0 - 0 - ns - 45 - 50 - ns 35 - 45 - 50 - ns Data Hold Time 0 - 0 - 0 - ns Output Enable Setup Time 0 - 0 - 0 - ns Read Recover Time Before Write 0 - 0 - 0 - ns /CE Setup Time 0 - 0 - 0 - ns - 0 - 0 - ns tCH /CE Hold Time 0 tWP Write Pulse Width 35 - 35 - 50 - ns tWPH Write Pulse Width High 30 - 30 - 30 - ns tPGM Programming Operation tBERS Block Erase Operation (2) tVCS Vcc set up time tRB Write Recover Time Before RY_/BY 11 11 11 ns 0.7 50 - 0.7 50 - 0.7 50 - ns 0 - 0 - 0 - ns ns Notes : : 1. Not 100% tested 2 . The duration of the program or erase operation varies and is calculated in the internal algorithms. URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA u Erase/Program Operations Alternate /CE Controlled Writes - 80 PARAMETER -90 -120 DESCRIPTION MIN MAX MIN MAX MIN MAX tWC Write Cycle Time(1) 80 - 90 - 120 - ns tAS Address Setup Time 0 - 0 - 0 - ns tAH Address Hold Time 45 - 45 - 50 - ns tDS Data Setup Time 35 - 45 - 50 - ns tDH Data Hold Time 0 - 0 - 0 - ns tOES Output Enable Setup Time 0 - 0 - 0 - ns Read Recover Time Before W rite 0 - 0 - 0 - ns tWS /WE Setup time 0 - 0 - 0 - ns tWH /WE Hold time 0 - 0 - 0 - ns tPGM /CE Pulse Width tCPH /CE Pulse Width High 30 tWHWH1 Programming Operation 11 us tWHWH2 Sector Erase Operation 0.7 sec tGHWL 35 35 50 ns Notes : 1. Not 100% tested 2 . This does not include the preprogramming time u READ OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA u RESET TIMING u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA Alternate /CE Controlled Writes u CHIP/BLOCK ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA PACKAGE DIMENSIONS URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VA 1.3±0.10 mm ORDERING INFORMATION Part Number Density Org. Package HMF2M32F4VA-80 8MByte x 32 80Pin – SMM HMF2M32F4VA-90 8Mbyte x 32 HMF2M32F4VA-120 8Mbyte x 32 URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 3.3V 80ns 80Pin – SMM 4EA 3.3V 90ns 80Pin – SMM 4EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.