HANBit HMF8M16F8VS FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin Part No. HMF8M16F8VS GENERAL DESCRIPTION The HMF8M16F8VS is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, MMC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT FEATURES w Part identification P1 HMF8M16F8VS P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol w Access time: 90, 100, 120ns 1 VCC 21 VCC 1 VCC 21 VCC w High-density 16MByte design 2 NC 22 DQ15 2 CE1* 22 NC w High-reliability, low-power design 3 NC 23 DQ7 3 CE2* 23 NC w Single + 3V to 3.6V power supply 4 NC 24 DQ14 4 CE3* 24 BYTE* 5 NC 25 DQ6 5 CE4* 25 OE* 6 RY_BY* 26 DQ13 6 CE5* 26 CE0* 7 VSS 27 VSS 7 VSS 27 VSS w 10-year data retention at 85 oC 8 RESET* 28 DQ5 8 CE6* 28 A16 w Flexible sector architecture 9 WE* 29 DQ12 9 CE7* 29 A0 10 A19 30 DQ4 10 NC 30 A18 11 A8 31 DQ11 11 NC 31 A17 12 A9 32 DQ3 12 NC 32 A7 13 A10 33 DQ10 13 NC 33 A6 14 VSS 34 VSS 14 VSS 34 VSS 15 A11 35 DQ2 15 NC 35 A5 16 A12 36 DQ9 16 NC 36 A4 17 A13 37 DQ1 17 NC 37 A3 18 A14 38 DQ8 18 NC 38 A2 19 A15 39 DQ0 19 NC 39 A1 20 VCC 40 VCC 20 VCC 40 VCC (Bottom boot block configuration) w 80-Pin Designed 40-Pin, 0.8mm Fine Pitch Connector P1,P2 w Minimum 100,000 write cycle guarantee per sector w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 90ns access - 90 100ns access -100 120ns access -120 w Packages SMM 80-pin F FUNCTIONAL BLOCK DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS A(0 :19) DQ(0 :15) A(0:19) DQ(0:15) /CE0 /CE1 /CE2 /CE /OE /WE /Reset /RY-BY A(0:19) DQ(0:15) /CE /OE /WE /Reset /RY-BY U4 A(0:19) DQ(0:15) /CE /OE /WE /Reset /RY-BY /OE /WE /Reset /RY-BY /CE A(0:19) DQ(0:15) /CE /OE /WE /Reset /RY-BY /OE /WE /Reset /RY-BY U2 /OE /WE /Reset /Ry-By /CE /OE /WE /Reset /RY-BY /CE5 U7 A(0:19) DQ(0:15) A(0:19) DQ(0:15) /CE3 U8 A(0:19) DQ(0:15) U3 /CE4 /CE /CE6 U6 A(0:19) DQ(0:15) /OE /WE /Reset /RY-BY U1 /CE /CE7 U5 TRUTH TABLE URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS MODE /CS /OE /WE RESET DQ Vcc±0.3V X X Vcc±0.3V HIGH-Z RESET X X X L HIGH-Z SECTOR PROTECT L H L VID DIN, DOUT SECTOR UNPROTECT L H L VID DIN, DOUT READ L L H H DOUT WRITE L H L H DOUT STANDBY Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING Voltage on Any Pin Relative to Vss -0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss -0.5V to +4.0V Output Short Circuit Current 1,600mA -65oC to +150oC Storage Temperature -0oC to +70oC Operating Temperature w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS RANGE PARAMETER Vcc for regulated Supply Voltage +2.0V to 3.6V Vcc for full voltage +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current VIN= VSS to VCC , VCC= VCC max IL1 -8.0 +8.0 µA Output Leakage Current VOUT= VSS to VCC, VCC= VCC max IL0 -8.0 +8.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH 0.85xVcc Output Low Voltage IOL = 4.0mA, Vcc = Vcc min VOL 0.4 V Vcc Active Read Current /CE = VIL, ,/OE=VIL, f=5MHz ICC1 128 mA Vcc Active Write Current /CE = VIL, /OE=VIH ICC2 240 mA Vcc Standby Current /CE, RESET=VCC±0.3V ICC3 40 µA Vcc Reset Current /RESET=Vss±0.3V, ICC4 40 µA Low Vcc Lock-Out Voltage URL: www.hbe.co.kr REV.02(August,2002) VLKO 3 1.5 V V HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. 0.7 15 COMMENTS Excludes 00H programming Block Erase Time - Sec prior to erasure Byte Programming Time - 9 Excludes system-level µS 270 overhead Excludes system-level Chip Programming Time - 18 54 sec overhead CAPACITANCE PARAMETER PARAMETER TEST SETUP SYMBOL MIN. MAX UNIT DESCRIPTION CIN Input Capacitance VIN = 0 10 pF COUT Output Capacitance VOUT = 0 10 pF CIN2 Control Pin Capacitance VIN = 0 10 pF o Notes: Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER CL=100pF SYMBOLS DESCRIPTION UNIT -90 JEDEC -100 -120 STANDARD Min Max 90 Min Max 100 Min Max tAVAV tRC Read Cycle Time 120 ns tELQV tCE Chip Enable to Output Delay 90 100 120 ns tGLQV tOE Chip Enable to Output Delay 35 40 50 ns tEHQZ tDF Chip Enable to Output High-Z 30 30 30 ns tAXQX tQH Output Hold Time From Addresses, 0 0 0 /CE or /OE, Whichever Occurs First TEST CONDITIONS URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. ns HANBit HMF8M16F8VS TEST CONDITION 75 ALL OTHERS Output load UNIT 1TTL gate Output load capacitance, 30 100 pF 5 20 ns 0.0 - 3.0 0.45-2.4 V Input timing measurement reference levels 1.5 0.8, 2.0 V Output timing measurement reference levels 1.5 0.8, 2.0 V CL (Including jig capacitance) Input rise and full times Input pulse levels 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION JEDEC -90 -100 -120 UNIT STANDARD Min Max Min Max Min Max tAVAV tWC Write Cycle Time 90 100 120 ns tAVWL tAS Address Setup Time 0 0 0 ns tWLAX tAH Address Hold Time 45 45 50 ns tDVWH tDS Data Setup Time 45 45 50 ns tWHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns Read Recover Time Before Write 0 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time 0 0 0 ns tWHEH tCH /CE Hold Time 0 0 0 ns tWLWH tWP Write Pulse Width 45 45 50 ns URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS tWHWL tWPH Write Pulse Width High 30 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation 9 9 9 µs tWHWH2 tBERS Block Erase Operation 0.7 0.7 0.7 sec tVCS Vcc Setup Time 50 50 50 µs tRB Recovery time from RY/BY 0 0 0 ns Program/Erase Valid to RY/BY Delay 90 90 90 ns tBUSY u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION -90 STANDARD tAVAV tWC Write Cycle Time 90 100 120 ns tAVEL tAS Address Setup Time 0 0 0 ns tELAX tAH Address Hold Time 45 45 50 ns tDVEH tDS Data Setup Time 45 45 50 ns tEHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns tGHEL tGHEL Read Recover Time Before Write 0 0 0 ns tWLEL tWS /OE High to /WE Low 0 0 0 ns tEHWH tWH /WE Hold Time 0 0 0 ns tELEH tCP /CE Pulse Width 45 45 50 ns tEHEL tCPH /CE Pulse Width High 30 30 30 ns tBUSY Program/Erase Valid RY//BY Delay 90 90 90 ns Recovery Time from RY//BY 0 0 0 ns URL: www.hbe.co.kr REV.02(August,2002) 6 Max Min UNIT -120 JEDEC tRB Min -100 Max Min Max HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS PACKAGE DIMENSIONS UNIT: mm (Front-Side) (Rear-Side) URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF8M16F8VS ORDERING INFORMATION Part Number Density Org. Package HMF8M16F8VS-90 16MByte x 16 80Pin -SMM HMF8M16F8VS-100 16MByte x 16 HMF8M16F8VS-120 16MByte x 16 URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 3.3V 90ns 80Pin -SMM 8EA 3.3V 100ns 80Pin -SMM 8EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.