HANBit HMF25664F4VSP FLASH-ROM MODULE 2MByte (256K x 64-Bit) ,120PIN SMM,3.3V Part No. HMF25664F4VSP GENERAL DESCRIPTION The HMF25664F4VSPis a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 256K x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible PIN ASSIGNMENT P1 FEATURES w Access time : 90,100 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 100,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 90ns access -90 100ns access -100 120ns access -120 w Packages 120-pin SMM URL: www.hbe.co.kr REV.02(August,2002) F P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 2 Vcc DQ32 31 32 Vss DQ0 1 2 Vcc DQ16 31 32 Vss DQ48 3 4 5 DQ33 DQ34 DQ35 33 34 35 DQ1 DQ2 DQ3 3 4 5 DQ17 DQ18 DQ19 33 34 35 DQ49 DQ50 DQ51 6 7 DQ36 DQ37 36 37 DQ4 DQ5 6 7 DQ20 DQ21 36 37 DQ52 DQ53 8 DQ38 38 DQ6 8 DQ22 38 DQ54 9 DQ39 39 DQ7 9 DQ23 39 DQ55 10 11 12 Vcc DQ40 DQ41 40 41 42 Vss DQ8 DQ9 10 11 12 Vcc DQ24 DQ25 40 41 42 Vss DQ56 DQ57 13 14 15 16 DQ42 DQ43 DQ44 DQ45 43 44 45 46 DQ10 DQ11 DQ12 DQ13 13 14 15 16 DQ26 DQ27 DQ28 DQ29 43 44 45 46 DQ58 DQ59 DQ60 DQ61 17 18 19 20 DQ46 DQ47 Vcc A1 47 48 49 50 DQ14 DQ15 Vss A10 17 18 19 20 DQ30 DQ31 Vcc NC 47 48 49 50 DQ62 DQ63 Vss NC 21 22 23 A2 A3 A4 51 52 53 A11 A12 A13 21 22 23 A0 A16 /WE1 51 52 53 /BANK0 Vss /BYTE 24 25 26 27 28 29 30 A5 Vcc A6 A7 A8 A9 Vcc 54 55 56 57 58 59 60 A14 Vss A15 A17 NC NC Vss 24 25 26 27 28 29 30 /WE2 Vcc /OE /RESET /WE0 54 55 56 57 58 59 60 /WE3 Vss NC NC NC NC Vss 1 /RY_BY Vcc HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ63 A0 – A17 64 18 A(0-17) DQ(0-15) /WE0 /WE /BYTE /OE U2 /CE RY-BY /Reset A(0-17) DQ(16-31) /WE1 /WE /BYTE /OE U3 /CE RY-BY /Reset A(0-17) DQ(32-47) /WE2 /WE /OE /BYTE /CE U1 RY-BY /Reset A(0-17) DQ(48-63) /WE3 /WE /OE /OE /BANK0 /CE RY_/BY RY-BY /BYTE U4 /Reset /RESET /BYTE URL: www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP TRUTH TABLE DQ8-DQ15 MODE /OE /CE /WE /RESET DQ0-DQ7 /BYTE=V IH STANDBY X Vcc± 0.3 X Vcc± 0.3 HIGH-Z HIGH-Z NOT SELECTED H L H H HIGH-Z HIGH-Z READ L L H H Dout Dout WRITE or ERASE H L L H Din Din NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to VCC+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for Regulated Voltages Range VCC 3.0V 3.6V Vcc for Full Voltages Range Vcc 2.7V 3.6V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS IL1 ±1.0 µA IL0 ±1.0 µA VIN=VSS to Vcc Input Load Current Vcc = Vcc max Output Leakage Current Vcc=Vcc max, V OUT= VSS to Vcc IOH = -2.0mA, Vcc = Vcc min VOH1 0.85VCC IOH = -100uA, Vcc = Vcc min VOH2 VCC – 0.4 Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2,3) /CE = VIL, /OE=VIH, ICC1 /CE = VIL, /OE=VIH Vcc Standby Current(3) /CE,/RESET= VCC ±0.3V Output High Voltage 0.45 V 7 12 mA ICC2 15 30 mA ICC3 0.2 5 mA 2.5 V Low Vcc Lock-Out Voltage VLKO 2.3 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. typical V CC is 3.0V. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL: www.hbe.co.kr REV.02(August,2002) 3 V HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. Sector Erase Time - 0.7 15 Sec Byte Programming Time - 9 300 µs Chip Programming Time - 11 COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead Sec CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Erase / Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION JEDEC -90 -100 -120 UNIT STANDARD Min Max Min Max Min Max tAVAV tWC Write Cycle Time 90 100 120 ns tAVWL tAS Address Setup Time 0 0 0 ns tWLAX tAH Address Hold Time 45 45 50 ns tDVWH tDS Data Setup Time 45 45 50 ns tWHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns Read Recover Time Before Write 0 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time 0 0 0 ns tWHEH tCH /CE Hold Time 0 0 0 ns tWLWH tWP Write Pulse Width 45 45 50 ns tWHWL tWPH Write Pulse Width High 30 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation 9 9 9 µs tWHWH2 tBERS Block Erase Operation 0.7 0.7 0.7 sec tVCS Vcc Setup Time 50 50 50 µs tRB Recovery time from RY/BY 0 0 0 ns Program/Erase Valid to RY/BY Delay 90 90 90 ns tBUSY Notes : 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Alternate /CE Controlled Erase/ Program Operations CL=100pF PARAMETER SYMBOLS DESCRIPTION -90 Max Min Max UNIT -120 JEDEC STANDARD tAVAV tWC Write Cycle Time 90 100 120 ns tAVEL tAS Address Setup Time 0 0 0 ns tELAX tAH Address Hold Time 45 45 50 ns tDVEH tDS Data Setup Time 45 45 50 ns tEHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns tGHEL tGHEL Read Recover Time Before Write 0 0 0 ns tWLEL tWS /OE High to /WE Low 0 0 0 ns tEHWH tWH /WE Hold Time 0 0 0 ns tELEH tCP /CE Pulse Width 45 45 50 ns tEHEL tCPH /CE Pulse Width High 30 30 30 ns tBUSY Program/Erase Valid RY//BY Delay 90 90 90 ns Recovery Time from RY//BY 0 0 0 ns tRB Min -100 Min Max Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information . URL: www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF25664F4VSP PACKAGE DIMENSIONS ORDERING INFORMATION Part Number Density Org. Package HMF25664F4VSP-90 2MByte X 64 120 Pin-SMM HMF25664F4VSP-100 2MByte X 64 HMF25664F4VSP-120 2MByte X 64 Component Vcc SPEED 4EA 3.3V 90ns 120 Pin-SMM 4EA 3.3V 100ns 120 Pin-SMM 4EA 3.3V 120ns Number P : PULL UP OF ALL SIGNAL (DATA LINE, ADDRESS LINE, CONTROLL SIGNAL LINE) URL: www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd.