HMC415LP3 v02.0604 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB • 802.11a WLAN 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal 34% PAE @ Psat = +26 dBm • HiperLAN WLAN Supply Voltage: +3.0 V • Access Points Power Down Capability • UNII & ISM Radios Low External Part Count Functional Diagram General Description The HMC415LP3 is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3.0V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Electrical Specifications, TA = +25° C, Vs = 3V, Vpd = 3V Parameter Min. Frequency Range Max. Min. 4.9 - 5.1 Gain 18 Gain Variation Over Temperature Max. Min. 5.1 - 5.4 20 0.04 Typ. 18.5 0.05 20.5 0.04 16 0.05 Typ. Max. Units 5.4 - 5.9 GHz 19 dB 0.04 0.05 dB / °C Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB 21.5 21.0 dBm 24 dBm 30 dBm Output Power for 1dB Compression (P1dB) Icq = 285 mA Icq = 200 mA 20 Saturated Output Power (Psat) Error Vector Magnitude (54 Mbps OFDM Signal @ +15 dBm Pout) 22.5 22.0 20.5 25.5 Output Third Order Intercept (IP3) 28 31 Icq = 200 mA Noise Figure 23.0 22.5 18 26 29 32 27 3.7 % 6 6 6 dB 0.002 / 285 0.002 / 285 0.002 / 285 mA Supply Current (Icq) Vpd = 0V/3V Control Current (Ipd) Vpd = 3V 7 7 7 mA tOn, tOff 45 45 45 ns Switching Speed 8 - 188 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Broadband Gain & Return Loss 8 Gain vs. Temperature 25 24 20 22 20 15 5 S11 S22 16 0 -5 14 12 10 8 -10 +25 C 6 -15 +85 C -40 C 4 -20 2 -25 3 4 5 6 7 0 4.8 8 5 FREQUENCY (GHz) 5.6 5.8 6 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 5.4 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 +25 C +85 C -15 5.2 AMPLIFIERS - SMT S21 GAIN (dB) RESPONSE (dB) 18 10 -10 -15 +25 C +85 C -40 C -40 C -20 4.8 5 5.2 5.4 5.6 5.8 -20 4.8 6 5 FREQUENCY (GHz) 28 26 26 24 24 Psat (dBm) P1dB (dBm) 30 28 22 20 18 10 4.8 +85 C -40 C 5 5.2 6 5.8 6 20 18 +25 C +85 C -40 C 14 12 5.4 5.8 22 16 +25 C 12 5.6 Psat vs. Temperature 30 14 5.4 FREQUENCY (GHz) P1dB vs. Temperature 16 5.2 5.6 FREQUENCY (GHz) 5.8 6 10 4.8 5 5.2 5.4 5.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 189 MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Power Compression @ 5.2 GHz Output IP3 vs. Temperature 40 36 32 28 Pout (dBm) 38 Gain (dB) 36 PAE (%) 34 24 OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) 20 16 12 32 30 28 26 +25 C 8 24 4 22 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 20 4.8 12 +85 C -40 C 5 INPUT POWER (dBm) Noise Figure vs. Temperature 28 9 27 NOISE FIGURE (dB) 8 7 6 5 4 +25 C +85 C -40 C 2 1 0 4.8 5 5.2 5.4 5.6 5.8 6 24 23 22 21 20 Gain P1dB 19 Psat 3 3.3 Vcc Supply Voltage (Vdc) Power Down Isolation vs. Temperature 0 0 +25 C -10 +25 C -10 +85 C -40 C ISOLATION (dB) ISOLATION (dB) 5.8 25 18 2.7 6 Reverse Isolation vs. Temperature -20 -30 -40 +85 C -40 C -20 -30 -40 5 5.2 5.4 5.6 FREQUENCY (GHz) 8 - 190 5.6 26 FREQUENCY (GHz) -50 4.8 5.4 Gain & Power vs. Supply Voltage 10 3 5.2 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm) AMPLIFIERS - SMT 8 5.8 6 -50 4.8 5 5.2 5.4 5.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5.8 6 MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz EVM vs. Temperature, Icc = 240 mA, F = 5.2 GHz 8 ERROR VECTOR MAGNITUDE (%) 8 Icc=160mA 7 Icc=200mA Icc=240mA 6 Icc=280mA 5 4 3 2 1 0 7 +25 C +85 C 6 -40 C 5 4 3 2 1 0 10 11 12 13 14 15 16 17 18 10 11 12 13 OUTPUT POWER (dBm) 14 15 16 OUTPUT POWER (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @ 5.2 GHz 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 Gain P1dB Psat Icc 1.75 2 2.25 2.5 2.75 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 17 18 Icc (mA) GAIN (dB), P1dB (dBm), Psat (dBm) ERROR VECTOR MAGNITUDE (%) 8 AMPLIFIERS - SMT EVM vs. Supply Current, F = 5.2 GHz 3 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 191 MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz AMPLIFIERS - SMT 8 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.0 Vdc Control Voltage (Vpd) +3.5 Vdc RF Input Power (RFin)(Vs = Vpd = +3.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 17 mW/°C above 85 °C) 1.105 W Thermal Resistance (junction to ground paddle) 59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. 8 - 192 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Pin Descriptions 8 Function Description 1 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 2, 3, 5, 6, 7, 8, 9, 12, 13, 15, 16 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 4 RF IN This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz. 10, 11 RF OUT RF output and DC bias for the output stage. 14 Vpd Power control pin. For maximum power, this pin should be connected to 3.0V. A higher voltage is not recommemded. For lower idle current, this voltage can be reduced. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com AMPLIFIERS - SMT Pin Number 8 - 193 MICROWAVE CORPORATION v02.0604 HMC415LP3 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 2.2 µF Capacitor, Tantalum C5 0.5 pF Capacitor, 0603 Pkg. C6 7.0 pF Capacitor, 0402 Pkg. L1 3.0 nH Inductor, 0805 Pkg. U1 HMC415LP3 Amplifier PCB* 104723 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 8 - 194 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC415LP3 v02.0604 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Application Circuit AMPLIFIERS - SMT 8 Recommended Component Values L1 3.0 nH C1, C2, C3 330 pF C4 2.2 µF C5 0.5 pF C6 7.0 pF Note 1: C1 should be located < 0.1” (2.54mm) from Pin 1 (Vcc) Note 2: C3 should be located < 0.1” (2.54mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 195