HMC413QS16G v03.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: Gain: 23 dB • Cellular / PCS / 3G 42% PAE • Portable & Infrastructure Supply Voltage: +2.75V to +5.0 V • Wireless Local Loop Power Down Capability Functional Diagram Low External Part Count Saturated Power: +29.5 dBm General Description The HMC413QS16G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Parameter 8 - 166 Vs= 5.0V Frequency Units Min. Typ. 18 19 18 17 21 22 21 20 Max. Min. Typ. 19 20 19 18 22 23 22 21 Max. Gain 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.1 GHz 2.1 - 2.2 GHz Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 Input Return Loss 1.6 - 2.2 GHz 10 10 dB Output Return Loss 1.6 - 2.2 GHz 8 9 dB Output Power for 1 dB Compression (P1dB) 1.6 - 1.7 GHz 1.7 - 2.2 GHz 26 27 dBm dBm Saturated Output Power (Psat) 1.6 - 1.7 GHz 1.7 - 2.2 GHz 28.5 29.5 dBm dBm Output Third Order Intercept (IP3) 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.2 GHz 39 40 39 dBm dBm dBm Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB 0.002/220 0.002/270 mA 20 21 23 24 0.035 0.025 23 24 25.5 26.5 32 33 32 35 36 35 36 37 36 dB dB dB dB 0.035 dB/°C Supply Current (Icq) Vpd= 0V/3.6V Control Current (Ipd) Vpd= 3.6V 7 7 mA Switching Speed tON, tOFF 80 80 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC413QS16G v03.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 0 -2 -4 -4 RETURN LOSS (dB) RETURN LOSS (dB) 0 -6 -8 -10 -12 -14 S11 -16 2 2.1 2.2 2.3 2.4 2.5 2 -12 -14 S11 S22 -20 1.3 1.4 1.5 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) P1dB vs. Temperature, Vs= 5.0V P1dB (dBm) P1dB vs. Temperature, Vs= 3.6V +25 C +85 C -40 C 2 -8 -10 -18 2.1 2.2 2.3 2.4 2.5 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) -6 -16 S22 -18 P1dB (dBm) +85 C -40 C Return Loss, Vs= 5.0V -2 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 +25 C FREQUENCY (GHz) Return Loss, Vs= 3.6V -20 1.3 1.4 1.5 1.6 1.7 1.8 1.9 8 AMPLIFIERS - SMT 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Gain vs. Temperature, Vs= 5.0V GAIN (dB) GAIN (dB) Gain vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 167 MICROWAVE CORPORATION HMC413QS16G v03.1203 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Psat vs. Temperature, Vs= 3.6V 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Psat vs. Temperature, Vs= 5.0V Psat (dBm) Psat (dBm) AMPLIFIERS - SMT 8 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Power Compression@ 1.9 GHz, Vs= 3.6V Pout (dBm) 38 Gain (dB) 34 PAE (%) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 2 2.1 2.2 2.3 2.4 2.5 Power Compression@ 1.9 GHz, Vs= 5.0V 30 26 22 18 14 10 6 42 Pout (dBm) 38 Gain (dB) 34 PAE (%) 30 26 22 18 14 10 6 -10 -8 -6 -4 -2 0 2 4 6 8 2 -12 -10 -8 10 INPUT POWER (dBm) +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) -4 -2 0 2 4 6 8 10 12 14 Output IP3 vs. Temperature, Vs= 5.0V OIP3 (dBm) 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -6 INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V OIP3 (dBm) +85 C -40 C 46 42 2 -12 +25 C FREQUENCY (GHz) 46 8 - 168 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 1.3 1.4 1.5 1.6 1.7 1.8 1.9 +25 C +85 C -40 C 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC413QS16G v03.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Reverse Isolation vs. Temperature, Vs= 3.6V 0 0 +25 C +85 C -40 C -10 -30 -40 -50 -20 -30 -40 -50 -60 -70 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -60 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) 9 8 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 10 9 7 6 5 4 +25 C +85 C 2 1.6 1.7 1.8 7 6 5 4 3 +25 C 2 -40 C 1 +85 C -40 C 1 1.9 2 2.1 2.2 2.3 2.4 0 1.5 2.5 1.6 1.7 FREQUENCY (GHz) Gain 2 2.1 2.2 2.3 2.4 2.5 30 27 28 26 26 25 24 24 22 23 20 22 P1dB Psat 21 18 16 14 4.75 Vcc SUPPLY VOLTAGE (Vdc) 5.25 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 1.5 Gain P1dB Psat Icq 1.75 2 2.25 2.5 2.75 3 3.25 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 Icq (mA) 28 GAIN (dB), P1dB (dBm), Psat (dBm) 32 P1dB, Psat (dBm) GAIN (dB) 34 29 4.25 1.9 Gain, Power & Quiescent Supply Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V 30 3.75 1.8 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 1.9 GHz 3.25 2.1 2.2 2.3 2.4 2.5 Noise Figure vs. Temperature, Vs= 5.0V 10 3 2 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 20 2.75 AMPLIFIERS - SMT -20 ISOLATION (dB) ISOLATION (dB) -10 0 1.5 8 Power Down Isolation, Vs= 3.6V 3.5 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 169 MICROWAVE CORPORATION HMC413QS16G v03.1203 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz AMPLIFIERS - SMT 8 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd1, Vpd2) +4.0 Vdc RF Input Power (RFin)(Vs = +5.0 Vdc, Vpd = +3.6 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) 1.56 W Thermal Resistance (junction to ground paddle) 42 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 170 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC413QS16G v03.1203 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Pin Number Function Description 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RF IN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz. 11, 12 RF OUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 AMPLIFIERS - SMT Pin Descriptions 8 - 171 MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Evaluation PCB AMPLIFIERS - SMT 8 * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2 mm DC Header C1 2.2 pF Capacitor, 0603 Pkg. C2 10 pF Capacitor, 0402 Pkg. C3 - C4 330 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor, Tantalum L1 16 nH Inductor 0603 Pkg. U1 HMC413QS16G Amplifier PCB* 105018 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 8 - 172 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1203 HMC413QS16G GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Application Circuit AMPLIFIERS - SMT 8 TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.1” 0.15” 0.1” * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 173