HMC315 / 315E v02.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Typical Applications Features The HMC315 / HMC315E is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation Gain: 15 dB • Broadband Mobile Radio Platforms Single Supply: +5V to +7V Ultra Small Package: SOT26 Functional Diagram General Description The HMC315 & HMC315E are ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single positive supply. The surface mount SOT26 amplifier can be used as a broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. Electrical Specifications, TA = +25° C, As a Function of Vcc Vcc = +5V Vcc = +7V Parameter Units Min. Frequency Range Gain Max. Min. 14 17 11 0.015 0.025 DC - 7 11 Gain Variation over Temperature 8 - 68 Typ. Typ. Max. DC - 7 GHz 15 18 dB 0.015 0.025 dB/°C Input Return Loss 7 10 7 10 dB Output Return Loss 3 7 3 7 dB Reverse Isolation 18 21 18 21 dB Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 8 11 13 16 dBm Saturated Output Power (Psat) @ 1.0 GHz 10 13 15 17.5 dBm Output Third Order Intercept (OIP3) @ 1.0 GHz 23 26 30 33 dBm Noise Figure 6.5 6.5 dB Supply Current (Icc) 30 50 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 20 15 15 10 10 S11 S21 S22 0 -5 -10 5 -5 -10 -15 -15 -20 -20 -25 S11 S21 S22 0 -25 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 20 18 18 16 16 14 14 12 10 +25C +60C -40C 6 5 6 7 8 7 8 7 8 12 10 8 +25 C +60 C -40 C 6 4 4 2 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 3 4 5 6 FREQUENCY (GHz) Input & Output Return Loss vs. Vcc Bias Reverse Isolation vs. Vcc Bias 0 0 -5 ISOLATION (dB) -5 RETURN LOSS (dB) 4 Gain vs. Temperature @ Vcc= +5V 20 GAIN (dB) GAIN (dB) Gain vs. Temperature @ Vcc= +7V 8 3 FREQUENCY (GHz) AMPLIFIERS - SMT 20 5 8 Gain & Return Loss @ Vcc= +5V RESPONSE (dB) RESPONSE (dB) Gain & Return Loss @ Vcc= +7V -10 -15 S11 Vcc=7V S22 Vcc=7V S11 Vcc=5V S22 Vcc=5V -20 S12 Vcc=7V -10 S12 Vcc=5V -15 -20 -25 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 69 HMC315 / 315E v02.0605 P1dB vs. Temperature @ Vcc= +7V P1dB vs. Temperature @ Vcc= +5V 20 20 18 18 16 16 14 14 P1dB (dBm) P1dB (dBm) AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 12 10 8 6 12 10 8 6 +25 C +60 C -40 C 4 +25 C +60 C -40 C 4 2 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 20 18 18 16 16 14 14 12 10 8 7 8 7 8 7 8 10 8 +25C +60C -40C 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 3 4 5 6 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vcc= +7V Output IP3 vs. Temperature @ Vcc= +5V 30 28 26 +25 C +60 C -40 C 24 IP3 (dBm) IP3 (dBm) 6 12 4 2 22 20 18 16 +25 C +60 C -40 C 14 12 10 0 1 2 3 4 5 FREQUENCY (GHz) 8 - 70 5 6 +25 C +60 C -40 C 4 4 Psat vs. Temperature @ Vcc= +5V 20 Psat (dBm) Psat (dBm) Psat vs. Temperature @ Vcc= +7V 6 3 FREQUENCY (GHz) 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 INPUT POWER (dBm) -4 -2 0 2 4 6 Power Compression @ 3.0 GHz, Vcc= +5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) -6 INPUT POWER (dBm) Power Compression @ 3.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm) Gain (dB) PAE (%) AMPLIFIERS - SMT 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 8 Power Compression @ 1.0 GHz, Vcc= +5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1.0 GHz, Vcc= +7V Pout Gain (dB) PAE (%) -6 -4 -2 INPUT POWER (dBm) 0 2 4 6 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 Pout (dBm) Gain (dB) PAE (%) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 71 HMC315 / 315E v02.0605 Application Circuit Absolute Maximum Ratings AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Collector Bias Voltage (Vcc) +7.5 Vdc RF Input Power (RFin)(Vcc = +7.0 Vdc) +11 dBm Junction Temperature 150 °C Continuous Pdiss (T = 60 °C) (derate 4.14 mW/°C above 60 °C) 0.373 W Thermal Resistance (junction to lead) 242 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +60 °C ESD Sensitivity (HBM) Class 1A %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish MSL Rating HMC315 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC315E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H315 XXXX [2] 315E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 8 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 104217 [1] Item Description J1, J2 PCB Mount SMA Connector U1 HMC315 / HMC315E Amplifier PCB [2] Evaluation PCB 1.5” x 1.5” [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 73