HITTITE HMC280MS8G

HMC280MS8G / 280MS8GE
v04.0605
AMPLIFIERS - SMT
8
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Typical Applications
Features
The HMC280MS8G / HMC280MS8GE is ideal for:
Psat Output Power: +24 dBm
• UNII & HiperLAN
Output IP3: +38 dBm
High Gain: 18 dB
• ISM
Single Supply: +3.6V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC280MS8G & HMC280MS8GE are +3.6V
GaAs MMIC power amplifiers covering 5 to 6 GHz.
The device is packaged in a low cost, surface mount
8 lead MSOP plastic package with an exposed base
paddle for improved RF ground and thermal dissipation. The amplifier provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal with
the amplifier occupying less than 0.023 sq. in. (14.6
sq. mm). All data is taken with the amplifier assembled into a 50 ohm test fixture with the exposed base
paddle connected to RF ground.
Electrical Specifications, TA = +25° C, Vdd= +3.6V
Parameter
Min.
Frequency Range
Gain
14
Gain Flatness
Max.
19
Units
GHz
23
±1.0
dB
dB
Input Return Loss
8
12
dB
Reverse Isolation
40
44
dB
20
18
23
22
dBm
Output Power for 1 dB Compression (P1dB)
5.0 - 5.5 Ghz
5.0 - 6.0 Ghz
Saturated Output Power (Psat)
21
24
dBm
Output Third Order Intercept (IP3)
33
38
dBm
13
dB
480
mA
Noise Figure
Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc)
8-2
Typ.
5.0 - 6.0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC280MS8G / 280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
30
15
25
S11
S21
S22
5
20
0
15
10
-5
-40 C
+25 C
+70 C
5
-10
-15
0
4
4.5
5
5.5
6
6.5
7
4
4.5
5
FREQUENCY (GHz)
30
28
28
26
26
24
22
20
5V
3.6V
3.3V
16
14
4.5
5
3V
2.7V
7
22
20
-40 C
+25 C
+70 C
18
16
5.5
14
4.5
6
5
5.5
6
FREQUENCY (GHz)
P1dB vs. Supply Voltage
P1dB vs. Temperature @ 3.6V
30
30
28
5V
3.6V
3.3V
26
28
3V
2.7V
OUTPUT P1dB (dBm)
OUTPUT P1dB (dBm)
6.5
24
FREQUENCY (GHz)
24
22
20
18
16
14
4.5
6
Psat vs. Temperature @ 3.6V
30
OUTPUT PSAT (dBm)
OUTPUT PSAT (dBm)
Psat vs. Supply Voltage
18
5.5
FREQUENCY (GHz)
AMPLIFIERS - SMT
20
10
8
Gain vs. Temperature @ 3.6V
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
26
24
22
20
18
-40 C
+25 C
+70 C
16
5
5.5
FREQUENCY (GHz)
6
14
4.5
5
5.5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-3
HMC280MS8G / 280MS8GE
v04.0605
8
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Output IP3 vs Supply Voltage @ 6.0 GHz
Power Compression @ 5.25 GHz
50
Output Power (dBm)
Gain (dB)
PAE (%)
25
45
20
40
OIP3 (dBm)
Pout (dBm), GAIN (dB), PAE (%)
AMPLIFIERS - SMT
30
15
10
5
0
-10
35
25
-5
0
5
10
20
2.5
15
INPUT POWER (dBm)
50
45
45
40
40
OIP3 (dBm)
OIP3 (dBm)
3.5
4
4.5
5
35
-40 C
+25 C
+70 C
25
35
-40 C
+25 C
+70 C
30
25
5
5.5
20
4.5
6
5
FREQUENCY (GHz)
5.5
FREQUENCY (GHz)
Reverse Isolation @ 3.6V
REVERSE ISOLATION (dB)
0
-10
-20
-30
-40
-50
-60
4.5
5
5.5
6
FREQUENCY (GHz)
8-4
5.5
Output IP3 vs. Temperature @ 5.0V
50
30
3
Vdd SUPPLY VOLTAGE (Vdc)
Output IP3 vs. Temperature @ 3.6V
20
4.5
-40 C
+25 C
+70 C
30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
6
HMC280MS8G / 280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFin) (Vdd = +3.6 Vdc)
+14 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 41 mW/°C above 85 °C)
2.67 W
Thermal Resistance
(channel to ground paddle )
24.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
Outline Drawing
AMPLIFIERS - SMT
8
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC280MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC280MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H280
XXXX
[2]
H280
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-5
HMC280MS8G / 280MS8GE
v04.0605
Recommended PCB Layout
AMPLIFIERS - SMT
8
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
List of Materials for Evaluation PCB 103103 [1]
Item
Description
J1, J2
PCB Mount SMA Connector
J3, J4, J5
DC Pins
C1, C2
1000 pF Capacitor, 0603 Pkg.
C3, C4
100 pF Capacitor, 0402 Pkg.
L1
3.9 nH Inductor, 0402 Pkg.
U1
HMC280MS8G / HMC280MS8GE
Amplifier
PCB [2]
103104 Evaluation Board
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC280MS8G / 280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
AMPLIFIERS - SMT
Application Circuit
Note 1: Vdd1 and Vdd2 may be connected to a common Vdd feed after RF choke.
Recommended Component Values
L1
3.9 nH
C1
1000 pF
C2
100 pF
Note 2: L1 should be located < 0.020” (0.508 mm) from pin 8 (Vdd1).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-7