HMC280MS8G / 280MS8GE v04.0605 AMPLIFIERS - SMT 8 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz Typical Applications Features The HMC280MS8G / HMC280MS8GE is ideal for: Psat Output Power: +24 dBm • UNII & HiperLAN Output IP3: +38 dBm High Gain: 18 dB • ISM Single Supply: +3.6V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC280MS8G & HMC280MS8GE are +3.6V GaAs MMIC power amplifiers covering 5 to 6 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The amplifier provides 18 dB of gain and 24 dBm Psat while operating from a single positive supply. External component requirements are minimal with the amplifier occupying less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifier assembled into a 50 ohm test fixture with the exposed base paddle connected to RF ground. Electrical Specifications, TA = +25° C, Vdd= +3.6V Parameter Min. Frequency Range Gain 14 Gain Flatness Max. 19 Units GHz 23 ±1.0 dB dB Input Return Loss 8 12 dB Reverse Isolation 40 44 dB 20 18 23 22 dBm Output Power for 1 dB Compression (P1dB) 5.0 - 5.5 Ghz 5.0 - 6.0 Ghz Saturated Output Power (Psat) 21 24 dBm Output Third Order Intercept (IP3) 33 38 dBm 13 dB 480 mA Noise Figure Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc) 8-2 Typ. 5.0 - 6.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC280MS8G / 280MS8GE v04.0605 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz 30 15 25 S11 S21 S22 5 20 0 15 10 -5 -40 C +25 C +70 C 5 -10 -15 0 4 4.5 5 5.5 6 6.5 7 4 4.5 5 FREQUENCY (GHz) 30 28 28 26 26 24 22 20 5V 3.6V 3.3V 16 14 4.5 5 3V 2.7V 7 22 20 -40 C +25 C +70 C 18 16 5.5 14 4.5 6 5 5.5 6 FREQUENCY (GHz) P1dB vs. Supply Voltage P1dB vs. Temperature @ 3.6V 30 30 28 5V 3.6V 3.3V 26 28 3V 2.7V OUTPUT P1dB (dBm) OUTPUT P1dB (dBm) 6.5 24 FREQUENCY (GHz) 24 22 20 18 16 14 4.5 6 Psat vs. Temperature @ 3.6V 30 OUTPUT PSAT (dBm) OUTPUT PSAT (dBm) Psat vs. Supply Voltage 18 5.5 FREQUENCY (GHz) AMPLIFIERS - SMT 20 10 8 Gain vs. Temperature @ 3.6V GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 26 24 22 20 18 -40 C +25 C +70 C 16 5 5.5 FREQUENCY (GHz) 6 14 4.5 5 5.5 6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-3 HMC280MS8G / 280MS8GE v04.0605 8 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz Output IP3 vs Supply Voltage @ 6.0 GHz Power Compression @ 5.25 GHz 50 Output Power (dBm) Gain (dB) PAE (%) 25 45 20 40 OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 30 15 10 5 0 -10 35 25 -5 0 5 10 20 2.5 15 INPUT POWER (dBm) 50 45 45 40 40 OIP3 (dBm) OIP3 (dBm) 3.5 4 4.5 5 35 -40 C +25 C +70 C 25 35 -40 C +25 C +70 C 30 25 5 5.5 20 4.5 6 5 FREQUENCY (GHz) 5.5 FREQUENCY (GHz) Reverse Isolation @ 3.6V REVERSE ISOLATION (dB) 0 -10 -20 -30 -40 -50 -60 4.5 5 5.5 6 FREQUENCY (GHz) 8-4 5.5 Output IP3 vs. Temperature @ 5.0V 50 30 3 Vdd SUPPLY VOLTAGE (Vdc) Output IP3 vs. Temperature @ 3.6V 20 4.5 -40 C +25 C +70 C 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC280MS8G / 280MS8GE v04.0605 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc RF Input Power (RFin) (Vdd = +3.6 Vdc) +14 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 41 mW/°C above 85 °C) 2.67 W Thermal Resistance (channel to ground paddle ) 24.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 Outline Drawing AMPLIFIERS - SMT 8 Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC280MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC280MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H280 XXXX [2] H280 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-5 HMC280MS8G / 280MS8GE v04.0605 Recommended PCB Layout AMPLIFIERS - SMT 8 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz List of Materials for Evaluation PCB 103103 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4, J5 DC Pins C1, C2 1000 pF Capacitor, 0603 Pkg. C3, C4 100 pF Capacitor, 0402 Pkg. L1 3.9 nH Inductor, 0402 Pkg. U1 HMC280MS8G / HMC280MS8GE Amplifier PCB [2] 103104 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 8-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC280MS8G / 280MS8GE v04.0605 GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz 8 AMPLIFIERS - SMT Application Circuit Note 1: Vdd1 and Vdd2 may be connected to a common Vdd feed after RF choke. Recommended Component Values L1 3.9 nH C1 1000 pF C2 100 pF Note 2: L1 should be located < 0.020” (0.508 mm) from pin 8 (Vdd1). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-7