HITTITE HMC441LH5

HMC441LH5
v02.0508
LINEAR & POWER AMPLIFIERS - SMT
11
Typical Applications
Features
The HMC441LH5 is a medium PA for:
Gain: 5 dB
• Telecom Infrastructure
Saturated Power: +21.5 dBm @ 25% PAE
• Military Radio, Radar & ECM
Single Positive Supply: +5V
• Space Systems
50 Ohms Matched Input/Output
• Test Instrumentation
Hermetic SMT Package, 25mm2
Screening to MIL-PRF-38535 (Class B or S) Available
Functional Diagram
General Description
The HMC441LH5 is a broadband 7 to 15.5 GHz
GaAs PHEMT MMIC Medium Power Amplifier housed
in a hermetic SMT leadless package. The amplifier
provides 15 dB of gain and 21.5 dBm of saturated
power at 25% PAE from a +5V supply. This 50 Ohm
matched amplifier does not require any external
components, and the RF I/Os are DC blocked,
making it an ideal linear gain block or driver amplifier.
The HMC441LH5 allows the use of surface mount
manufacturing techniques and is suitable for high
reliability military, industrial & space applications.
Electrical Specifi cations, TA = +25° C, Vdd = 5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
7.0 - 8.0
11
Gain Variation Over Temperature
14
0.015
Typ.
Max.
Min.
8.0 - 13.0
13
0.02
16
0.015
Typ.
Max.
Min.
13.0 - 14.0
12
0.02
15
0.015
Typ.
Max.
14.0 - 15.5
10.5
0.02
GHz
13.5
0.015
Units
dB
0.02
dB/ °C
Input Return Loss
11
13
10
8
dB
Output Return Loss
10
15
14
12
dB
19
dBm
21
dBm
dBm
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
11 - 80
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
15.5
18.5
17
20
20
16
21
19
16
21.5
Output Third Order Intercept (IP3)
30
32
32
32
Noise Figure
5.0
4.75
4.75
5.0
Supply Current (Idd)
90
115
90
115
90
115
90
dB
115
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC441LH5
v02.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
20
15
16
5
GAIN (dB)
RESPONSE (dB)
10
S21
S11
S22
0
-5
12
+25C
+85C
-40C
8
11
-10
4
0
-20
4
6
8
10
12
14
16
18
6
20
8
Input Return Loss vs. Temperature
14
16
18
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
12
Output Return Loss vs. Temperature
0
-10
-15
-20
+25C
+85C
-40C
-5
-10
-15
-20
6
8
10
12
14
16
18
6
8
FREQUENCY (GHz)
12
14
16
18
16
18
Psat vs. Temperature
23
21
21
Psat (dBm)
23
19
17
+25C
+85C
-40C
15
10
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
10
FREQUENCY (GHz)
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
-15
19
+25C
+85C
-40C
17
15
13
13
6
8
10
12
14
FREQUENCY (GHz)
16
18
6
8
10
12
14
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 81
HMC441LH5
v02.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
Power Compression @ 12 GHz
Output IP3 vs. Temperature
36
24
Pout
Gain
PAE
32
IP3 (dBm)
20
16
12
28
+25C
+85C
-40C
24
8
20
4
16
0
-10
-6
-2
2
6
10
6
8
10
12
14
16
18
16
18
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain, Power & Output IP3
vs. Supply Voltage @ 12 GHz
Noise Figure vs. Temperature
36
10
34
32
+25C
+85C
-40C
8
28
NOISE FIGURE (dB)
30
Gain
P1dB
Psat
IP3
26
24
22
20
6
4
18
2
16
14
4.5
0
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
6
8
10
Vdd Supply Voltage (V)
12
14
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
11
Pout (dBm), GAIN (dB), PAE(%)
28
+25C
+85C
-40C
-20
-30
-40
-50
6
8
10
12
14
16
18
FREQUENCY (GHz)
11 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LH5
v02.0508
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc)
+15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
0.76 W
Thermal Resistance
(channel to ground paddle)
118.8 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.5
92
+5.0
90
+4.5
88
Note: Amplifier will operate over full voltage range shown above
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR
2. LEAD AND GROUND PADDLE PLATING: GOLD 40 - 80 MICROINCHES.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PAD BURR LENGTH 0.15mm MAX.
PAD BURR HEIGHT 0.25mm MAX.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
LINEAR & POWER AMPLIFIERS - SMT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11 - 83
HMC441LH5
v02.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
Pin Descriptions
Pin Number
Function
Description
1, 3-7, 9,
10, 12
GND
These pins and package bottom must be connected
to RF/DC ground.
2
RFIN
This pin is AC coupled
and matched to 50 Ohms.
8
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
11
Vdd
Power Supply Voltage for the amplifier.
External bypass capacitors are recommended.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 84
Interface Schematic
Application Circuit
Component
Value
C1
100 pF
C2
1,000 pF
C3
4.7 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LH5
v02.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
Evaluation PCB
List of Materials for Evaluation PCB 111560 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector, SRI
U1
HMC441LH5
C1
100 pF Capacitor, 0402 Pkg.
C2
1,000 pF Capacitor, 0603 Pkg.
C3
4.7 μF Capacitor, Tantalum
PCB [2]
111558 Evaluation Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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