MA R 2 3 1 0 The item can replace AP2310GN Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: POWER MOSFET MODEL: MA R 2 3 1 0 SOT 2 3 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] Page 1 of 5 http://www.hoperf.com MAR2310 POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS(ON) 90mΩ ID 3A S SOT-23 Description G MARKING:2310 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 60 V ±20 V 3 3 A 3 2.3 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value Unit 90 ℃/W 2 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: [email protected] http://www.hoperf.com POWER MOSFET MAR2310 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Max. Units Min. Typ. 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A - - 90 mΩ VGS=4.5V, ID=2A - - 120 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=5V, ID=3A - 5 - S Drain-Source Leakage Current (Tj=25 C) VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=3A - 6 10 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC VDS=30V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=30Ω - 3 - ns Ciss Input Capacitance VGS=0V - 490 780 pF Coss Output Capacitance VDS=25V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. 3 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: [email protected] http://www.hoperf.com POWER MOSFET MAR2310 10 10 8 ID , Drain Current (A) ID , Drain Current (A) 8 10V 7.0V 5.0V 4.5V T A = 150 o C 10V 7.0V 5.0V 4.5V o T A =25 C 6 V G = 3.0 V 4 2 6 V G = 3.0 V 4 2 0 0 0 1 3 2 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 ID=2A 99 ID=3A V G =10V 1.8 o T A =25 C Normalized R DS(ON) RDS(ON) (mΩ ) 1.6 93 87 1.4 1.2 1.0 81 0.8 0.6 75 2 6 4 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 3 Normalized VGS(th) (V) 1.2 IS(A) 2 T j =150 o C T j =25 o C 1 1.0 0.8 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: [email protected] http://www.hoperf.com POWER MOSFET MAR2310 f=1.0MHz 1000 ID=3A 12 C iss V DS = 30 V V DS =38V V DS =48V 10 C (pF) VGS , Gate to Source Voltage (V) 14 8 100 6 C oss C rss 4 2 10 0 0 3 6 9 12 1 15 5 Q G , Total Gate Charge (nC) 9 13 17 21 29 25 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100.000 Normalized Thermal Response (Rthja) Duty factor=0.5 10.000 100us 1.000 ID (A) 1ms 10ms 0.100 100ms 1s DC T A =25 o C Single Pulse 0.010 0.2 0.1 0.1 0.05 PDM 0.01 t T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ /W 0.001 0.0001 0.001 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: [email protected] http://www.hoperf.com