AP2N7002K
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
60V
RDS(ON)
2Ω
ID
▼ RoHS Compliant
640mA
S
SOT-23
Description
G
D
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The SOT-23 package is universally used for all commercial-industrial
applications.
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
60
V
±20
V
3
640
mA
3
500
mA
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1,2
IDM
Pulsed Drain Current
950
mA
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200209062-1/4
AP2N7002K
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=500mA
-
-
2
Ω
VGS=4.5V, ID=200mA
-
-
4
Ω
VDS=VGS, ID=250uA
1
-
2.5
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=600mA
-
600
-
mS
o
VDS=60V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=48V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=600mA
-
1
1.6
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=50V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.5
-
nC
VDS=30V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=600mA
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
56
-
ns
tf
Fall Time
RD=52Ω
-
29
-
ns
Ciss
Input Capacitance
VGS=0V
-
32
50
pF
Coss
Output Capacitance
VDS=25V
-
8
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1.2A, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2/4
AP2N7002K
1.0
1.0
0.8
ID , Drain Current (A)
ID , Drain Current (A)
0.8
0.6
0.4
V G = 3.0 V
0.6
0.4
V G = 3.0 V
0.2
0.2
0.0
0.0
0.0
2.0
4.0
0
6.0
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.0
I D = 200m A
I D = 500m A
V G =10V
T A =25 o C
Normalized RDS(ON)
2.5
RDS(ON) (mΩ )
10V
7.0V
5.0V
4.5V
o
T A = 150 C
10V
7.0V
5.0V
4.5V
T A =25 o C
2.0
1.5
1.0
1.5
0.5
1.0
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.7
Normalized VGS(th) (V)
0.6
0.4
o
o
IS(A)
T j =150 C
T j =25 C
0.2
1.3
0.9
0.5
0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2N7002K
f=1.0MHz
100
I D = 600m A
C iss
12
V DS = 30 V
V DS =40V
V DS =50V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
10
C oss
C rss
4
1
0
0
0.5
1
1.5
1
2
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1.000
Normalized Thermal Response (Rthja)
1
1ms
10ms
ID (A)
0.100
100ms
1s
0.010
T A =25 o C
Single Pulse
DC
0.001
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270 ℃ /W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.0
VG
V DS =5V
ID , Drain Current (A)
0.8
T j =25 o C
QG
T j =150 o C
4.5V
0.6
QGS
QGD
0.4
0.2
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4