AP2622GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D2
D1
▼ Small Package Outline
▼ Surface Mount Package
50V
RDS(ON)
1.8Ω
ID
G2
G1
BVDSS
▼ RoHS Compliant
520mA
S2
S1
Description
D2
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
S1
D1
G2
The SOT-26 package is universally used for all commercial-industrial
applications.
SOT-26
G1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
50
V
±20
V
3
520
mA
3
410
mA
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1,2
IDM
Pulsed Drain Current
1.5
A
PD@TA=25℃
Total Power Dissipation
0.8
W
Linear Derating Factor
0.006
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
150
℃/W
200624051-1/4
AP2622GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
50
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=500mA
-
-
1.8
Ω
VGS=4.5V, ID=200mA
-
-
3.2
Ω
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=500mA
-
600
-
mS
o
VDS=50V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=40V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=500mA
-
1
1.6
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=40V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.5
-
nC
VDS=25V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=500mA
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
56
-
ns
tf
Fall Time
RD=50Ω
-
29
-
ns
Ciss
Input Capacitance
VGS=0V
-
32
50
pF
Coss
Output Capacitance
VDS=25V
-
8
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.6A, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 250℃/W when mounted on min. copper pad.
2/4
AP2622GY
1.0
1.0
0.8
ID , Drain Current (A)
ID , Drain Current (A)
0.8
0.6
0.4
V G = 3.0 V
0.6
0.4
V G = 3.0 V
0.2
0.2
0.0
0.0
0.0
2.0
4.0
0
6.0
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.0
I D = 500m A
V G =10V
I D = 200m A
T A =25 o C
Normalized RDS(ON)
2.5
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
T A = 150 C
10V
7.0V
5.0V
4.5V
o
T A =25 C
2.0
1.5
1.0
1.5
0.5
1.0
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
Normalized VGS(th) (V)
0.6
0.4
o
o
IS(A)
T j =150 C
T j =25 C
0.2
1.1
0.7
0.3
0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2622GY
f=1.0MHz
100
I D = 500m A
C iss
12
V DS = 25 V
V DS =30V
V DS =40V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
10
C oss
C rss
4
1
0
0
0.5
1
1.5
1
2
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10.00
1.00
ID (A)
100us
1ms
0.10
10ms
o
T A =25 C
Single Pulse
100ms
1s
DC
0.01
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja =250℃/W
Single Pulse
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.0
VG
V DS =5V
ID , Drain Current (A)
0.8
T j =25 o C
QG
T j =150 o C
4.5V
0.6
QGS
QGD
0.4
0.2
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4