HUASHAN H1270

PNP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H1270
█ CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
1―Emitter,E
2―Collector,C
3―Base,B
VCBO——Collector-Base Voltage………………………………-35V
VCEO——Collector-Emitter Voltage……………………………-30V
V EBO ——Emitter-Base Voltage………………………………-5V
I C ——Collector Current……………………………………-500mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
Collector Cut-off Current
-100
nA
VCB=-35V, IE=0
IEBO
Emitter Cut-off Current
-100
nA
VEB=-5V, IC=0
HFE(1)
DC Current Gain
70
HFE(2)
VCE(sat)
VBE
fT
Cob
VCE=-1V, IC=-100mA
240
VCE=-6V, IC=-400mA
25
Collector- Emitter Saturation Voltage
-0.1
-0.25
V
IC=-100mA, IB=-10mA
Base-Emitter Voltage
-0.8
-1.0
V
IC=-1A, IB=-100mA
Current Gain-Bandwidth Product
200
MHz VCE=-6V, IC=-20mA
Output Capacitance
13
pF
█ hFE Classification
O
Y
70—140
120—240
VCB=-6V, IE=0,f=1MHz