NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3200 █ APPLICATIONS Low Noise Audio Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………120V VCEO——Collector-Emitter Voltage……………………………120V VE B O ——Emitter -Base Voltage………………………………5V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit １２０ Ｖ Test Conditions IC=1mA, IB=0 ICBO Collector Cut-off Current １００ IEBO Emitter Cut-off Current １００ HFE DC Current Gain ２００ ７００ VCE=6V, IC=2mA VCE(sat) Collector- Emitter Saturation Voltage ０．３ Ｖ IC=10mA, IB=1mA VBE(ON) ０．６５ １００ ３．０ fT Cob Current Gain-Bandwidth Product Output Capacitance NF Noise Figure ６ NF ２ NF ３ Base-Emitter On Voltage █ hFE Classification GR ２００—４００ BL ３５０—７００ ｎＡ VCB=120V, IE=0 ｎＡ VEB=5V, IC=0 Ｖ VCE=6V, IC=2mA ＭＨｚ VCE=6V, IC=1mA ｐＦ VCB=10V, IE=0，f=1ＭＨｚ V =6V, IC=100μＡ ｄＢ CE f=10KHz,Rg=10KΩ V =6V, IC=100μＡ ｄＢ CE f=1KHz,Rg=10KΩ V =6V, IC=100μＡ ｄＢ CE f=1KHz,Rg=100KΩ Shantou Huashan Electronic Devices Co.,Ltd. H3200