NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 █ APPLICATIONS AUDIO AMPLIFICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW PC——Collector Dissipation…………………………………750mW 1―Emitter，E 2―Collector，C 3― Base，B VCBO——Collector-Base Voltage………………………………-25V VCBO——Collector-Base Voltage………………………………25V VCEO——Collector-Emitter Voltage……………………………-20V VCEO——Collector-Emitter Voltage……………………………20V V EBO ——Emitter-Base Voltage………………………………-5V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………-1A I C ——Collector Cu rrent……………………………………1 A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 25 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 20 V IC=1mA, BVEBO Emitter-Base Breakdown Voltage 5 V IE=10μA，IC=0 ICBO Collector Cut-off Current HFE DC Current Gain 1 60 μA IB=0 VCB=20V, IE=0 VCE=2V, IC=500mA 240 VCE(sat) Collector- Emitter Saturation Voltage 0.2 0.5 V IC=800mA, IB=80mA VBE(ON) Base-Emitter On Voltage 0.7 1 V VCE=2V, IC=500mA Current Gain-Bandwidth Product 180 MHz VCE=2V, IC=500mA Output Capacitance 22 pF fT Cob █ hFE Classification A 60—120 B 85—170 C 120—240 VCB=10V, IE=0，f=1MHz