NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H368 █ APPLICATIONS General Purpose Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………0.83W 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………32V VCEO——Collector-Emitter Voltage……………………………20V V EB O ——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………………1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 32 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 20 V IC=2mA, BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 IB=0 HFE（1） DC Current Gain 85 HFE（2） 50 VCE=10V, IC=5mA HFE（3） 60 VCE=1V, IC=1A VCE(sat) Collector- Emitter Saturation Voltage VBE(on1) VBE(on2) VCE=1V, IC=500mA 375 0.5 V IC=1A, IB=100mA Base-Emitter On Voltage 1 V VCE=1V, IC=1A Base-Emitter On Voltage 0.7 V VCE=10V, IC=5mA ICBO（1） Collector Cut-off Current 0.1 μA VCB=25V, IE=0 ICBO（2） Collector Cut-off Current 10 μA VCB=25V, IE=0,Ta=150℃ 0.1 μA VEB=5V, IC=0 MHz pF VCE=5V, IC=50mA ,f=100MHz VCB=10V, IE=0，f=1MHz IEBO fT Cc Emitter Cut-off Current Current Gain-Bandwidth Product Collector Capacitance 40 170 22 Shantou Huashan Electronic Devices Co.,Ltd. H368 Shantou Huashan Electronic Devices Co.,Ltd. H368